參數(shù)資料
型號(hào): M36WT864TF
廠商: 意法半導(dǎo)體
英文描述: 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
中文描述: 64兆位4Mb的x16插槽,多銀行,突發(fā)閃存和8兆位的SRAM為512k x16,內(nèi)存產(chǎn)品多
文件頁數(shù): 87/92頁
文件大?。?/td> 624K
代理商: M36WT864TF
87/92
M36WT864TF, M36WT864BF
Quadruple Enhanced Factory Program Pseudo Code
quad_efp_command(addressFlow,dataFlow,n)
/* n is the number of pages to be programmed.*/
{
/* Setup phase */
writeToFlash(addressFlow[0],0x75);
for (i=0; i++; i< n){
/*Data Load Phase*/
/*First Data*/
writeToFlash(addressFlow[i],dataFlow[i,0]);
/*at the first data of the first page, Quad-EFP may be aborted*/
if (First_Page) {
status_register=readFlash(any_address);
if (status_register.b7==1){
/*EFP aborted for an error*/
if (status_register.b4==1) /*program error*/
error_handler();
if (status_register.b3==1) /*VPP invalid error*/
error_handler();
if (status_register.b1==1) /*program to protect block error*/
error_handler();
}
}
/*2nd data*/
do{
status_register=readFlash(any_address);
/* E or G must be toggled*/
}while (status_register.b0==1)
writeToFlash(addressFlow[i],dataFlow[i,1]);
/*3rd data*/
do{
status_register=readFlash(any_address);
/* E or G must be toggled*/
}while (status_register.b0==1)
writeToFlash(addressFlow[i],dataFlow[i,2]);
/*4th data*/
do{
status_register=readFlash(any_address);
/* E or G must be toggled*/
}while (status_register.b0==1)
writeToFlash(addressFlow[i],dataFlow[i,3]);
/* Program&Verify Phase */
do{
status_register=readFlash(any_address);
/* E or G must be toggled*/
}while (status_register.b0==1)
}
/* Exit Phase */
writeToFlash(another_block_address,FFFFh);
/* status register polling */
do{
status_register=readFlash(any_address);
/* E or G must be toggled */
} while (status_register.b7==0);
if (status_register.b1==1) /*program to protected block error*/
error_handler();
if (status_register.b3==1) /*VPP invalid error*/
error_handler();
if (status_register.b4==1) /*program failure error*/
error_handler();
}
}
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