參數(shù)資料
型號(hào)： M36WT864B85ZA6T
廠商： 意法半導(dǎo)體
英文描述： 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
中文描述： 64兆位4Mb的x16插槽，多銀行，突發(fā)閃存和8兆位的SRAM為512k x16，內(nèi)存產(chǎn)品多
文件頁(yè)數(shù)： 44/92頁(yè)
文件大?。?/td> 624K
代理商： M36WT864B85ZA6T
M36WT864TF, M36WT864BF
44/92
Table 19. Flash DC Characteristics - Voltages
Table 20. SRAM DC Characteristics
Note: 1. Average AC current, cycling at t
AVAV
minimum.
2. E1 = V
IL
AND E2 = V
IH,
LB OR/AND UB = V
IL
, V
IN
= V
IL
OR V
IH
.
3. E1
≤
0.2V AND E2
≥
V
DDS
–0.2V, LB OR/AND UB
≤
0.2V, V
IN
≤
0.2V OR V
IN
≥
V
DDS
–0.2V.
4. Output disabled.
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
V
IL
Input Low Voltage
–0.5
0.4
V
V
IH
Input High Voltage
V
DDQ
–0.4
V
DDQ
+ 0.4
V
V
OL
Output Low Voltage
I
OL
= 100μA
0.1
V
V
OH
Output High Voltage
I
OH
= –100μA
V
DDQ
–0.1
V
V
PP1
V
PPF
Program Voltage-Logic
Program, Erase
1
1.8
1.95
V
V
PPH
V
PPF
Program Voltage Factory
Program, Erase
11.4
12
12.6
V
V
PPLK
Program or Erase Lockout
0.9
V
V
LKO
V
DD
Lock Voltage
1
V
V
RPH
RP pin Extended High Voltage
3.3
V
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
I
DD1 (1,2)
Operating Supply Current
V
DDS
= 3.3V, f = 1/t
AVAV
,
I
OUT
= 0mA
70ns
35
mA
I
DD2 (3)
Operating Supply Current
V
DDS
= 3.3V, f = 1MHz,
I
OUT
= 0mA
4
mA
I
SB
Standby Supply Current CMOS
V
DDS
= 3.3V, f = 0,
E1
≥
V
DDS
–0.2V or E2
≤
0.2V or
LB=UB
≥
V
DDS
–0.2V
1
20
μA
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
DDS
–1
1
μA
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
V
DDS (4)
–1
1
μA
V
IH
Input High Voltage
2.2
V
DDS
+
0.3
V
V
IL
Input Low Voltage
–0.3
0.6
V
V
OH
Output High Voltage
I
OH
= –1.0mA
2.4
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.4
V
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M36WT864BF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864BFZA 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864T10ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864T70ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864T85ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
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