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參數(shù)資料
| 型號： | M36WT864B85ZA6T |
| 廠商： | 意法半導體 |
| 英文描述： | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| 中文描述： | 64兆位4Mb的x16插槽，多銀行，突發(fā)閃存和8兆位的SRAM為512k x16，內存產(chǎn)品多 |
| 文件頁數(shù)： | 36/92頁 |
| 文件大?。?/td> | 624K |
| 代理商： | M36WT864B85ZA6T |
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M36WT864TF, M36WT864BF
36/92
Synchronous Single Reads are used to read the
Electronic Signature, Status Register, CFI, Block
Protection Status, Configuration Register Status
or Protection Register. When the addressed bank
is in Read CFI, Read Status Register or Read
Electronic Signature mode, the WAIT signal is al-
ways asserted.
See Table 22, Synchronous Read AC Character-
istics and Figure 14, Single Synchronous Read AC
Waveform for details.
FLASH DUAL OPERATIONS AND MULTIPLE BANK ARCHITECTURE
The Multiple Bank Architecture of the Flash mem-
ory provides flexibility for software developers by
allowing code and data to be split with 4Mbit gran-
ularity. The Dual Operations feature simplifies the
software management of the device and allows
code to be executed from one bank while another
bank is being programmed or erased.
The Dual operations feature means that while pro-
gramming or erasing in one bank, Read opera-
tions are possible in another bank with zero
latency (only one bank at a time is allowed to be in
Program or Erase mode). If a Read operation is re-
quired in a bank which is programming or erasing,
the Program or Erase operation can be suspend-
ed. Also if the suspended operation was Erase
then a Program command can be issued to anoth-
er block, so the device can have one block in
Erase Suspend mode, one programming and oth-
er banks in Read mode. Bus Read operations are
allowed in another bank between setup and con-
firm cycles of program or erase operations. The
combination of these features means that read op-
erations are possible at any moment.
Tables 11 and 12 show the dual operations possi-
ble in other banks and in the same bank. Note that
only the commonly used commands are repre-
sented in these tables. For a complete list of pos-
sible commands refer to Appendix D, Command
Interface State Tables.
Table 11. Dual Operations Allowed In Other Banks
Table 12. Dual Operations Allowed In Same Bank
Note: 1. Not allowed in the Block or Word that is being erased or programmed.
2. The Read Array command is accepted but the data output is not guaranteed until the Program or Erase has completed.
Status of bank
Commands allowed in another bank
Read
Array
Read
Status
Register
Read
CFI
Query
Read
Electronic
Signature
Program
Erase
Program/
Erase
Suspend
Program/
Erase
Resume
Idle
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Programming
Yes
Yes
Yes
Yes
–
–
Yes
–
Erasing
Yes
Yes
Yes
Yes
–
–
Yes
–
Program Suspended
Yes
Yes
Yes
Yes
–
–
–
Yes
Erase Suspended
Yes
Yes
Yes
Yes
Yes
–
–
Yes
Status of bank
Commands allowed in same bank
Read
Array
Read
Status
Register
Read
CFI Query
Read
Electronic
Signature
Program
Erase
Program/
Erase
Suspend
Program/
Erase
Resume
Idle
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Programming
–
(2)
Yes
Yes
Yes
–
–
Yes
–
Erasing
–
(2)
Yes
Yes
Yes
–
–
Yes
–
Program Suspended
Yes
(1)
Yes
Yes
Yes
–
–
–
Yes
Erase Suspended
Yes
(1)
Yes
Yes
Yes
Yes
(1)
–
–
Yes
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| M36WT864BFZA | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M36WT864BF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864BFZA | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864T10ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864T70ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864T85ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
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