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參數(shù)資料
| 型號： | M36WT864B85ZA6T |
| 廠商： | 意法半導體 |
| 英文描述： | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| 中文描述： | 64兆位4Mb的x16插槽，多銀行，突發(fā)閃存和8兆位的SRAM為512k x16，內(nèi)存產(chǎn)品多 |
| 文件頁數(shù)： | 10/92頁 |
| 文件大小： | 624K |
| 代理商： | M36WT864B85ZA6T |
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M36WT864TF, M36WT864BF
10/92
vice. It is the main power supply for all Flash oper-
ations (Read, Program and Erase).
V
DDQF
and V
DDS
Supply Voltage.
V
DDQF
pro-
vides the power supply for the Flash memory I/O
pins and V
DDS
provides the power supply for the
SRAM control and I/O pins. This allows all Outputs
to be powered independently from the Flash core
power supply, V
DDF
. V
DDQF
can be tied to V
DDS
or
it can use a separate supply.
V
PPF
Program Supply Voltage.
V
PPF
is both a
Flash control input and a Flash power supply pin.
The two functions are selected by the voltage
range applied to the pin.
If V
PPF
is kept in a low voltage range (0V to V
DDQF
)
V
PPF
is seen as a control input. In this case a volt-
age lower than V
PPLKF
gives an absolute protec-
tion against program or erase, while V
PPF
> V
PP1F
enables these functions (see Tables 18 and 19,
DC Characteristics for the relevant values). V
PPF
is only sampled at the beginning of a program or
erase; a change in its value after the operation has
started does not have any effect and program or
erase operations continue.
If V
PPF
is in the range of V
PPHF
it acts as a power
supply pin. In this condition V
PPF
must be stable
until the Program/Erase algorithm is completed.
V
SSF ,
V
SSQF
and V
SSS
Grounds.
V
SSF
, V
SSQF
and V
SSS
are the ground references for all voltage
measurements in the Flash (core and I/O Buffers)
and SRAM chips, respectively.
Note: Each device in a system should have
V
DDF
and V
PPF
decoupled with a 0.1μF ceramic
capacitor close to the pin (high frequency, in-
herently low inductance capacitors should be
as close as possible to the package). See Fig-
ure 10, AC Measurement Load Circuit. The
PCB trace widths should be sufficient to carry
the required V
PPF
program and erase currents.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M36WT864BF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864BFZA | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864T10ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864T70ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864T85ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
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