- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359059 > M36WT864B70ZA6T (意法半導(dǎo)體) 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product PDF資料下載
參數(shù)資料
| 型號： | M36WT864B70ZA6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| 中文描述： | 64兆位4Mb的x16插槽，多銀行，突發(fā)閃存和8兆位的SRAM為512k x16，內(nèi)存產(chǎn)品多 |
| 文件頁數(shù)： | 20/92頁 |
| 文件大?。?/td> | 624K |
| 代理商： | M36WT864B70ZA6T |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁當(dāng)前第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁
M36WT864TF, M36WT864BF
20/92
The Block Lock bits are volatile, once set they re-
main set until a hardware reset or power-down/
power-up. They are cleared by a Block Unlock
command. Refer to the section, Block Locking, for
a detailed explanation. See Appendix C, Figure
34, Locking Operations Flowchart and Pseudo
Code, for a flowchart for using the Lock command.
Block Unlock Command
The Block Unlock command is used to unlock a
block, allowing the block to be programmed or
erased. Two Bus Write cycles are required to is-
sue the Block Unlock command.
I
The first bus cycle sets up the Block Unlock
command.
I
The second Bus Write cycle latches the block
address.
The lock status can be monitored for each block
using the Read Electronic Signature command.
Table 13 shows the protection status after issuing
a Block Unlock command. Refer to the section,
Block Locking, for a detailed explanation and Ap-
pendix C, Figure 34, Locking Operations Flow-
chart and Pseudo Code, for a flowchart for using
the Unlock command.
Block Lock-Down Command
A locked or unlocked block can be locked-down by
issuing the Block Lock-Down command. A locked-
down block cannot be programmed or erased, or
have its protection status changed when WP is
low, V
IL
. When WP is high, V
IH,
the Lock-Down
function is disabled and the locked blocks can be
individually unlocked by the Block Unlock com-
mand.
Two Bus Write cycles are required to issue the
Block Lock-Down command.
I
The first bus cycle sets up the Block Lock
command.
I
The second Bus Write cycle latches the block
address.
The lock status can be monitored for each block
using the Read Electronic Signature command.
Locked-Down blocks revert to the locked (and not
locked-down) state when the device is reset on
power-down. Table. 13 shows the Lock Status af-
ter issuing a Block Lock-Down command. Refer to
the section, Block Locking, for a detailed explana-
tion and Appendix C, Figure 34, Locking Opera-
tions Flowchart and Pseudo Code, for a flowchart
for using the Lock-Down command.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M36WT864T85ZA6T | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864B10ZA6T | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864BF | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864T10ZA6T | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864TF | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36WT864B85ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864BF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864BFZA | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864T10ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864T70ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。