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參數(shù)資料
| 型號： | M36WT864B70ZA6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| 中文描述： | 64兆位4Mb的x16插槽，多銀行，突發(fā)閃存和8兆位的SRAM為512k x16，內(nèi)存產(chǎn)品多 |
| 文件頁數(shù)： | 15/92頁 |
| 文件大小： | 624K |
| 代理商： | M36WT864B70ZA6T |
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M36WT864TF, M36WT864BF
FLASH BUS OPERATIONS
There are six standard bus operations that control
the Flash device. These are Bus Read, Bus Write,
Address Latch, Output Disable, Standby and Re-
set. See Table 2, Main Operating Modes, for a
summary.
Typically glitches of less than 5ns on Chip Enable
or Write Enable are ignored by the memory and do
not affect Bus Write operations.
Bus Read.
Bus Read operations are used to out-
put the contents of the Memory Array, the Elec-
tronic Signature, the Status Register and the
Common Flash Interface. Both Chip Enable and
Output Enable must be at V
IL
in order to perform a
read operation. The Chip Enable input should be
used to enable the device. Output Enable should
be used to gate data onto the output. The data
read depends on the previous command written to
the memory (see Command Interface section).
See Figures 11, 12, 13 and 14 Read AC Wave-
forms, and Tables 21 and 22 Read AC Character-
istics, for details of when the output becomes
valid.
Bus Write.
Bus Write operations write Com-
mands to the memory or latch Input Data to be
programmed. A bus write operation is initiated
when Chip Enable and Write Enable are at V
IL
with
Output Enable at V
IH
. Commands, Input Data and
Addresses are latched on the rising edge of Write
Enable or Chip Enable, whichever occurs first. The
addresses can also be latched prior to the write
operation by toggling Latch Enable. In this case
the Latch Enable should be tied to V
IH
during the
bus write operation.
See Figures 16 and 17, Write AC Waveforms, and
Tables 23 and 24, Write AC Characteristics, for
details of the timing requirements.
Address Latch.
Address latch operations input
valid addresses. Both Chip enable and Latch En-
able must be at V
IL
during address latch opera-
tions. The addresses are latched on the rising
edge of Latch Enable.
Output Disable.
The outputs are high imped-
ance when the Output Enable is at V
IH
.
Standby.
Standby disables most of the internal
circuitry allowing a substantial reduction of the cur-
rent consumption. The memory is in stand-by
when Chip Enable and Reset are at V
IH
. The pow-
er consumption is reduced to the stand-by level
and the outputs are set to high impedance, inde-
pendently from the Output Enable or Write Enable
inputs. If Chip Enable switches to V
IH
during a pro-
gram or erase operation, the device enters Stand-
by mode when finished.
Reset.
During Reset mode the memory is dese-
lected and the outputs are high impedance. The
memory is in Reset mode when Reset is at V
IL
.
The power consumption is reduced to the Standby
level, independently from the Chip Enable, Output
Enable or Write Enable inputs. If Reset is pulled to
V
SS
during a Program or Erase, this operation is
aborted and the memory content is no longer valid.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M36WT864T85ZA6T | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864B10ZA6T | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864BF | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864T10ZA6T | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864TF | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36WT864B85ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864BF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864BFZA | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864T10ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864T70ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
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