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| 型號： | M36WT864 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| 中文描述： | 64兆位4Mb的x16插槽，多銀行，突發(fā)閃存和8兆位的SRAM為512k x16，內(nèi)存產(chǎn)品多 |
| 文件頁數(shù)： | 47/92頁 |
| 文件大?。?/td> | 624K |
| 代理商： | M36WT864 |
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M36WT864TF, M36WT864BF
Table 21. Flash Asynchronous Read AC Characteristics
Note: 1. Sampled only, not 100% tested.
2. G may be delayed by up to t
ELQV
- t
GLQV
after the falling edge of E without increasing t
ELQV
.
3. To be characterized.
Symbol
Alt
Parameter
M36WT864TF/BF
Unit
70
85
100
R
t
AVAV
t
RC
Address Valid to Next Address Valid
Min
70
(3)
85
100
ns
t
AVQV
t
ACC
Address Valid to Output Valid (Random)
Max
70
(3)
85
100
ns
t
AVQV1
t
PAGE
Address Valid to Output Valid (Page)
Max
20
(3)
25
25
ns
t
AXQX (1)
t
OH
Address Transition to Output Transition
Min
0
0
0
ns
t
ELTV
Chip Enable Low to Wait Valid
Max
14
(3)
18
18
ns
t
ELQV(2)
t
CE
Chip Enable Low to Output Valid
Max
70
(3)
85
100
ns
t
ELQX(1)
t
LZ
Chip Enable Low to Output Transition
Min
0
0
0
ns
t
EHTZ
Chip Enable High to Wait Hi-Z
Max
20
(3)
20
20
ns
t
EHQX (1)
t
OH
Chip Enable High to Output Transition
Min
0
0
0
ns
t
EHQZ(1)
t
HZ
Chip Enable High to Output Hi-Z
Max
20
(3)
20
20
ns
t
GLQV(2)
t
OE
Output Enable Low to Output Valid
Max
20
25
25
ns
t
GLQX(1)
t
OLZ
Output Enable Low to Output Transition
Min
0
0
0
ns
t
GHQX (1)
t
OH
Output Enable High to Output Transition
Min
0
0
0
ns
t
GHQZ(1)
t
DF
Output Enable High to Output Hi-Z
Max
20
(3)
20
20
ns
L
t
AVLH
t
AVADVH
Address Valid to Latch Enable High
Min
10
10
10
ns
t
ELLH
t
ELADVH
Chip Enable Low to Latch Enable High
Min
10
10
10
ns
t
LHAX
t
ADVHAX
Latch Enable High to Address Transition
Min
10
10
10
ns
t
LLLH
t
ADVLADVH
Latch Enable Pulse Width
Min
10
10
10
ns
t
LLQV
t
ADVLQV
Latch Enable Low to Output Valid (Random)
Max
70
(3)
85
100
ns
t
LHGL
t
ADVHGL
Latch Enable High to Output Enable Low
Min
0
0
0
ns
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| M36WT864B70ZA6T | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864T85ZA6T | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864B10ZA6T | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864BF | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864T10ZA6T | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36WT864B10ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864B70ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864B85ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864BF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864BFZA | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
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