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參數(shù)資料
| 型號： | M36WT864 |
| 廠商： | 意法半導體 |
| 英文描述： | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| 中文描述： | 64兆位4Mb的x16插槽，多銀行，突發(fā)閃存和8兆位的SRAM為512k x16，內(nèi)存產(chǎn)品多 |
| 文件頁數(shù)： | 26/92頁 |
| 文件大?。?/td> | 624K |
| 代理商： | M36WT864 |
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M36WT864TF, M36WT864BF
26/92
Table 7. Flash Factory Program Commands
Note: 1. WA=Word Address in targeted bank, BKA= Bank Address, PD=Program Data, BA=Block Address.
2. WA1 is the Start Address. NOT WA1 is any address that is not in the same block as WA1.
3. Address can remain Starting Address WA1 or be incremented.
4. Word Addresses 1 and 2 must be consecutive Addresses differing only for A0.
5. Word Addresses 1,2,3 and 4 must be consecutive Addresses differing only for A0 and A1.
6. A Bus Read must be done between each Write cycle where the data is programmed or verified to read the Status Register and
check that the memory is ready to accept the next data. n = number of Words, i = number of Pages to be programmed.
7. Address is only checked for the first Word of each Page as the order to program the Words in each page is fixed so subsequent
Words in each Page can be written to any address.
Command
Phase
C
Bus Write Operations
1st
2nd
3rd
Final -1
Final
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Double Word Program
(4)
3
BKA
35h
WA1
PD1
WA2
PD2
Quadruple Word
Program
(5)
5
BKA
56h
WA1
PD1
WA2
PD2
WA3
PD3
WA4
PD4
Enhanced
Factory
Program
(6)
Setup,
Program
2
+n
+1
BKA
30h
BA
D0h
WA1
(2)
PD1
WAn
(3)
PAn
NOT
WA1
(2)
FFFFh
Verify, Exit
n
+1
WA1
(2)
PD1
WA2
(3)
PD2
WA3
(3)
PD3
WAn
(3)
PAn
NOT
WA1
(2)
FFFFh
Quadruple
Enhanced
Factory
Program
(5,6)
Setup,
first Load
5
BKA
75h
WA1
(2)
PD1
WA2
(7)
PD2
WA3
(7)
PD3
WA4
(7)
PD4
First
Program &
Verify
Automatic
Subsequent
Loads
4
WA1i
(2)
PD1i
WA2i
(7)
PD2i
WA3i
(7)
PD3i
WA4i
(7)
PD4i
Subsequent
Program &
Verify
Automatic
Exit
1
NOT
WA1
(2)
FFFFh
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M36WT864B70ZA6T | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864T85ZA6T | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864B10ZA6T | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864BF | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864T10ZA6T | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36WT864B10ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864B70ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864B85ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864BF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864BFZA | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
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