參數(shù)資料
型號: M36W832Te70ZA6T
廠商: 意法半導體
英文描述: 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
中文描述: 32兆位的2Mb x16插槽,引導塊閃存和8兆位的SRAM 512KB的x16,內(nèi)存產(chǎn)品多
文件頁數(shù): 29/64頁
文件大?。?/td> 897K
代理商: M36W832TE70ZA6T
29/64
M36W832TE, M36W832BE
I
PPE
Program Current
(Erase)
Flash
Erase in progress
V
PPF
= 12V ± 5%
3
10
mA
Erase in progress
V
PPF
= V
DDF
1
5
μA
V
IL
Input Low Voltage
Flash &
SRAM
V
DDQF
= V
DDS
2.7V
–0.3
0.8
V
V
IH
Input High Voltage
Flash &
SRAM
V
DDQF
= V
DDS
2.7V
0.7V
DD
QF
V
DDQF
+0.4
V
V
OL
Output Low Voltage
Flash &
SRAM
V
DDQF
= V
DDS
= V
DD
min
I
OL
= 100μA
0.1
V
V
OH
Output High Voltage
Flash &
SRAM
V
DDQF
= V
DDS
= V
DD
min
I
OH
= –100μA
2.4
V
V
PPL
Program Voltage
(Program or Erase
operations)
Flash
1.65
3.6
V
V
PPH
Program Voltage
(Program or Erase
operations)
Flash
11.4
12.6
V
V
PPLK
Program Voltage
(Program and Erase
lock-out)
Flash
1
V
V
LKO
V
DDF
Supply Voltage
(Program and Erase
lock-out)
Flash
2
V
Symbol
Parameter
Device
Test Condition
Min
Typ
Max
Unit
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M36W832Te85ZA6S 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
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相關代理商/技術參數(shù)
參數(shù)描述
M36W832TE85ZA1S 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
M36W832TE85ZA1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
M36W832TE85ZA6S 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
M36W832TE85ZA6T 功能描述:組合存儲器 32M (2Mx16) 85ns RoHS:否 制造商:Microchip Technology 組織:512 K x 16 電源電壓-最大: 電源電壓-最小: 最大工作溫度:+ 85 C 最小工作溫度:- 20 C 封裝 / 箱體:LFBGA-48 封裝:Tray
M36W832TEZA 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product