參數(shù)資料
型號(hào): M36W832Te70ZA6T
廠商: 意法半導(dǎo)體
英文描述: 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
中文描述: 32兆位的2Mb x16插槽,引導(dǎo)塊閃存和8兆位的SRAM 512KB的x16,內(nèi)存產(chǎn)品多
文件頁(yè)數(shù): 20/64頁(yè)
文件大小: 897K
代理商: M36W832TE70ZA6T
M36W832TE, M36W832BE
20/64
Table 8. Flash Program, Erase Times and Program/Erase Endurance Cycles
Note: 1. Typical time to program a Main or Parameter Block using the Double Word Program and the Quadruple Word Program commands
respectively.
Parameter
Test Conditions
Flash Device
Unit
Min
Typ
Max
Word Program
V
PPF
= V
DDF
10
200
μs
Double Word Program
V
PPF
= 12V ±5%
10
200
μs
Quadruple Word Program
V
PPF
= 12V ±5%
10
200
μs
Main Block Program
V
PPF
= 12V ±5%
0.16/0.08
(1)
5
s
V
PPF
= V
DDF
0.32
5
s
Parameter Block Program
V
PPF
= 12V ±5%
0.02/0.01
(1)
4
s
V
PPF
= V
DDF
0.04
4
s
Main Block Erase
V
PPF
= 12V ±5%
1
10
s
V
PPF
= V
DD
V
DDF
1
10
s
Parameter Block Erase
V
PPF
= 12V ±5%
0.4
10
s
V
PPF
= V
DDF
0.4
10
s
Program/Erase Cycles (per Block)
100,000
cycles
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M36W832TE85ZA1S 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
M36W832TE85ZA1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
M36W832TE85ZA6S 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
M36W832TE85ZA6T 功能描述:組合存儲(chǔ)器 32M (2Mx16) 85ns RoHS:否 制造商:Microchip Technology 組織:512 K x 16 電源電壓-最大: 電源電壓-最小: 最大工作溫度:+ 85 C 最小工作溫度:- 20 C 封裝 / 箱體:LFBGA-48 封裝:Tray
M36W832TEZA 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product