參數(shù)資料
型號： M36W832TE-ZAT
廠商： 意法半導體
英文描述： 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
中文描述： 32兆位的2Mb x16插槽，引導塊閃存和8兆位的SRAM 512KB的x16，內(nèi)存產(chǎn)品多
文件頁數(shù)： 63/64頁
文件大小： 897K
代理商： M36W832TE-ZAT
63/64
M36W832TE, M36W832BE
REVISION HISTORY
Table 36. Document Revision History
Date
Version
Revision Details
16-Jul-2002
1.0
First Issue
29-Nov-2002
2.0
Revision History moved to end of document. Flash and SRAM components updated.
Table 2, Main Operation Modes, modified.
Flash Device: “Quadruple Word Program Command” added, “Double Word Program
Command” clarified, V
DDQF
Maximum changed to 3.6V, Corrections to Table 8, Flash
Program, Erase Times and Program/Erase Endurance Cycles, Table 15, DC
Characteristicss Table and to CFI Tables 30 and 31. Security block removed.
Command Codes Table added, DQ0, DQ2, DQ3-DQ7 and DQ8-DQ15 parameters
modified for Lock in Table 7, Flash Read Protection Register and Lock Register.
70ns Speed Class added. 100ns Speed Class removed.
SRAM device: “Data Retention” on Page 25 and SRAM read and write AC
characteristics (Figures 14, 15, 16, 17, 18, 19, 20, 21 and 22) modified. Figure 7,
SRAM Block Diagram, added.
24-Mar-2003
3.0
Document promoted to full Datasheet status. Minor corrections to SRAM Block
Diagram. Input Rise and Fall Time for 70ns speed class modified in Operating and AC
Measurement Conditions Table. LFBGA Connections and Daisy Chain pin numbers
modified.
26-May-2003
3.1
Special tape option added to ordering information scheme
相關PDF資料
PDF描述
M36W832Be70ZA6S 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
M36W832Be70ZA6T 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
M36W832Be85ZA1T 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
M36W832Be85ZA6S 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
M36W832Be85ZA6T 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
相關代理商/技術參數(shù)
參數(shù)描述
M36W864BE-70ZA6 制造商:Micron Technology Inc 功能描述:64M FLASH, 8M SRAM, 3V, BOT, BGA, IND - Trays
M36W864TE-70ZA6 制造商:Micron Technology Inc 功能描述:64M FLASH, 8M SRAM, 3V, TOP, BGA, IND - Trays
M36WR864TH70ZA6T 功能描述:閃存 64M (4Mx16) 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M36WT864 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864B10ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
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