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參數(shù)資料
| 型號： | M36W832TE-ZAT |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| 中文描述： | 32兆位的2Mb x16插槽，引導(dǎo)塊閃存和8兆位的SRAM 512KB的x16，內(nèi)存產(chǎn)品多 |
| 文件頁數(shù)： | 18/64頁 |
| 文件大?。?/td> | 897K |
| 代理商： | M36W832TE-ZAT |
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M36W832TE, M36W832BE
18/64
Refer to the “Flash Block Locking” section for a de-
tailed explanation.
Table 4. Flash Commands
Note: X = Don’t Care.
1. The signature addresses are listed in Tables 5, 6 and 7.
2. Addr 1 and Addr 2 must be consecutive Addresses differing only for A0.
3. Program Addresses 1 and 2 must be consecutive Addresses differing only for A0.
4. Program Addresses 1,2,3 and 4 must be consecutive Addresses differing only for A0 and A1.
5. 55h is reserved.
6. To be characterized.
Commands
C
Bus Write Operations
1st Cycle
2nd Cycle
3rd Cycle
4th Cycle
5th Cycle
Op. Add Data
Op.
Add Data Op.
Add Data Op.
Add Data Op. Add Data
Read Memory
Array
1+ Write
X
FFh
Read
RA
RD
Read Status
Register
1+ Write
X
70h
Read
X
SRD
Read Electronic
Signature
1+ Write
X
90h
Read SA
(2)
IDh
Read CFI Query
1+ Write
X
98h
Read QA
QD
Erase
2
Write
X
20h
Write
BA
D0h
Program
2
Write
X
40h
or
10h
Write
PA
PD
Double Word
Program
(3)
3
Write
X
30h
Write
PA1
PD1 Write
PA2
PD2
Quadruple Word
Program
(4)
5
Write
X
56h
(6)
Write
PA1
PD1
Write
PA2
PD2
Write PA3
PD3 Write PA4
PD4
Clear Status
Register
1
Write
X
50h
Program/Erase
Suspend
1
Write
X
B0h
Program/Erase
Resume
1
Write
X
D0h
Block Lock
2
Write
X
60h
Write
BA
01h
Block Unlock
2
Write
X
60h
Write
BA
D0h
Block Lock-Down
2
Write
X
60h
Write
BA
2Fh
Protection
Register Program
2
Write
X
C0h
Write
PRA
PRD
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M36W832Be70ZA6S | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832Be70ZA6T | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832Be85ZA1T | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832Be85ZA6S | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832Be85ZA6T | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36W864BE-70ZA6 | 制造商:Micron Technology Inc 功能描述:64M FLASH, 8M SRAM, 3V, BOT, BGA, IND - Trays |
| M36W864TE-70ZA6 | 制造商:Micron Technology Inc 功能描述:64M FLASH, 8M SRAM, 3V, TOP, BGA, IND - Trays |
| M36WR864TH70ZA6T | 功能描述:閃存 64M (4Mx16) 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M36WT864 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864B10ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
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