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參數(shù)資料
| 型號： | M36W832BEZA |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| 中文描述： | 32兆位的2Mb x16插槽，引導(dǎo)塊閃存和8兆位的SRAM 512KB的x16，內(nèi)存產(chǎn)品多 |
| 文件頁數(shù)： | 27/64頁 |
| 文件大?。?/td> | 897K |
| 代理商： | M36W832BEZA |
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M36W832TE, M36W832BE
DC AND AC PARAMETERS
This section summarizes the operating and mea-
surement conditions, and the DC and AC charac-
teristics of the device. The parameters in the DC
and AC characteristics Tables that follow, are de-
rived from tests performed under the Measure-
ment Conditions summarized in Table 13,
Operating and AC Measurement Conditions. De-
signers should check that the operating conditions
in their circuit match the measurement conditions
when relying on the quoted parameters.
The operating and AC measurement parameters
given below (see Table 13, Operating and AC
Measurement Conditions) are those of the stand-
alone Flash and SRAM devices and some differ
from those of the stacked product.
Table 13. Operating and AC Measurement Conditions
Figure 8. AC Measurement I/O Waveform
Note: V
DDQ
means V
DDQF
= V
DDS
Figure 9. AC Measurement Load Circuit
Table 14. Device Capacitance
Note: Sampled only, not 100% tested.
Parameter
SRAM
Flash Memory
Units
70
70 / 85
Min
Max
Min
Max
V
DDF
Supply Voltage
–
–
2.7
3.6
V
V
DDQF
Supply Voltage
–
–
2.7
3.6
V
V
DDS
Supply Voltage
2.7
3.3
–
–
V
Ambient Operating Temperature
– 40
85
– 40
85
°C
Load Capacitance (C
L
)
50
50
pF
Input Rise and Fall Times
3.3
5
ns
Input Pulse Voltages
0 to V
DDQF
0 to V
DDQF
V
Input and Output Timing Ref. Voltages
V
DDQF
/2
V
DDQF
/2
V
AI90166
VDDQ
0V
VDDQ/2
AI90167
VDDQF
CL
CL includes JIG capacitance
25k
DEVICE
UNDER
TEST
0.1μF
VDDF
0.1μF
VDDQF
25k
Symbol
Parameter
Test Condition
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V, f=1 MHz
12
pF
C
OUT
Output Capacitance
V
OUT
= 0V, f=1 MHz
16
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M36W832TE | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832Te70ZA1S | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832Te70ZA1T | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832Te70ZA6S | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832Te70ZA6T | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36W832TE | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832TE70ZA1S | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832TE70ZA1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832TE70ZA6S | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832TE70ZA6T | 功能描述:閃存 32M (2Mx16) 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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