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參數(shù)資料
| 型號： | M36W832BEZA |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| 中文描述： | 32兆位的2Mb x16插槽，引導(dǎo)塊閃存和8兆位的SRAM 512KB的x16，內(nèi)存產(chǎn)品多 |
| 文件頁數(shù)： | 11/64頁 |
| 文件大?。?/td> | 897K |
| 代理商： | M36W832BEZA |
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M36W832TE, M36W832BE
Flash Memory Component
The Flash Memory is a 32 Mbit (2 Mbit x 16) device
that can be erased electrically at block level and
programmed in-system on a Word-by-Word basis.
These operations can be performed using a single
low voltage (2.7 to 3.6V) supply. V
DDQF
allows to
drive the I/O pin down to 1.65V. An optional 12V
V
PPF
power supply is provided to speed up cus-
tomer programming.
The device features an asymmetrical blocked ar-
chitecture with an array of 71 blocks: 8 Parameter
Blocks of 4 KWords and 63 Main Blocks of 32
KWords. The M36W832TE has the Parameter
Blocks at the top of the memory address space
while the M36W832BE locates the Parameter
Blocks starting from the bottom. The memory
maps are shown in Figure 5, Block Addresses.
The Flash Memory features an instant, individual
block locking scheme that allows any block to be
locked or unlocked with no latency, enabling in-
stant code and data protection. All blocks have
three levels of protection. They can be locked and
locked-down individually preventing any acciden-
tal programming or erasure. There is an additional
hardware protection against program and erase.
When V
PPF
≤
V
PPLK
all blocks are protected
against program or erase. All blocks are locked at
Power Up.
Each block can be erased separately. Erase can
be suspended in order to perform either read or
program in any other block and then resumed.
Program can be suspended to read data in any
other block and then resumed. Each block can be
programmed and erased over 100,000 cycles.
The device includes a Protection Register to in-
crease the protection of a system design. The Pro-
tection Register is divided into two segments, the
first is a 64 bit area which contains a unique device
number written by ST, while the second is a 128 bit
area, one-time-programmable by the user. The
user programmable segment can be permanently
protected. Figure 6, shows the Flash Security
Block and Protection Register Memory Map.
Program and Erase commands are written to the
Command Interface of the memory. An on-chip
Program/Erase Controller takes care of the tim-
ings necessary for program and erase operations.
The end of a program or erase operation can be
detected and any error conditions identified. The
command set required to control the memory is
consistent with JEDEC standards.
Figure 5. Flash Block Addresses
Note: Also see Appendix A, Tables 26 and 27 for a full listing of the Flash Block Addresses.
AI90164
4 KWords
1FFFFF
1FF000
32 KWords
00FFFF
008000
007FFF
32 KWords
000000
Top Boot Block Addresses
4 KWords
1F8FFF
1F8000
1F7FFF
32 KWords
1F0000
Total of 8
4 KWord Blocks
Total of 63
32 KWord Blocks
4 KWords
1FFFFF
1F8000
1F7FFF
32 KWords
32 KWords
000FFF
000000
Bottom Boot Block Addresses
4 KWords
00FFFF
32 KWords
1F0000
008000
007FFF
Total of 63
32 KWord Blocks
Total of 8
4 KWord Blocks
007000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M36W832TE | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832Te70ZA1S | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832Te70ZA1T | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832Te70ZA6S | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832Te70ZA6T | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36W832TE | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832TE70ZA1S | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832TE70ZA1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832TE70ZA6S | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832TE70ZA6T | 功能描述:閃存 32M (2Mx16) 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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