參數(shù)資料
型號: M36W832BEZA
廠商: 意法半導(dǎo)體
英文描述: 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
中文描述: 32兆位的2Mb x16插槽,引導(dǎo)塊閃存和8兆位的SRAM 512KB的x16,內(nèi)存產(chǎn)品多
文件頁數(shù): 20/64頁
文件大?。?/td> 897K
代理商: M36W832BEZA
M36W832TE, M36W832BE
20/64
Table 8. Flash Program, Erase Times and Program/Erase Endurance Cycles
Note: 1. Typical time to program a Main or Parameter Block using the Double Word Program and the Quadruple Word Program commands
respectively.
Parameter
Test Conditions
Flash Device
Unit
Min
Typ
Max
Word Program
V
PPF
= V
DDF
10
200
μs
Double Word Program
V
PPF
= 12V ±5%
10
200
μs
Quadruple Word Program
V
PPF
= 12V ±5%
10
200
μs
Main Block Program
V
PPF
= 12V ±5%
0.16/0.08
(1)
5
s
V
PPF
= V
DDF
0.32
5
s
Parameter Block Program
V
PPF
= 12V ±5%
0.02/0.01
(1)
4
s
V
PPF
= V
DDF
0.04
4
s
Main Block Erase
V
PPF
= 12V ±5%
1
10
s
V
PPF
= V
DD
V
DDF
1
10
s
Parameter Block Erase
V
PPF
= 12V ±5%
0.4
10
s
V
PPF
= V
DDF
0.4
10
s
Program/Erase Cycles (per Block)
100,000
cycles
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M36W832TE 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
M36W832TE70ZA1S 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
M36W832TE70ZA1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
M36W832TE70ZA6S 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
M36W832TE70ZA6T 功能描述:閃存 32M (2Mx16) 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel