參數資料
型號: M36P0R9070E0ZACE
廠商: 意法半導體
英文描述: 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
中文描述: 512兆位(x16插槽,多銀行,多層次,多突發(fā))128兆位閃存(突發(fā))移動存儲芯片,1.8V電源,多芯片封裝
文件頁數: 12/26頁
文件大?。?/td> 200K
代理商: M36P0R9070E0ZACE
2 Signal descriptions
M36P0R9070E0
12/26
2.17 Deep Power-Down input (DPD
F
)
The Deep Power-Down input is used to place the device in a Deep Power-Down mode.When
the device is in Deep Power-Down mode, the memory cannot be modified and data is
protected.
For further details on how the Deep Power-Down input signal works, please refer to the
M58PR512J datasheet.
2.18 V
DDF
Supply Voltages
V
DDF
provides the power supply to the internal cores of the Flash memory. It is the main power
supply for all Flash memory operations (Read, Program and Erase).
2.19 V
CCP
Supply Voltage
V
CCP
provides the power supply to the internal core of the PSRAM device. It is the main power
supply for all PSRAM operations.
2.20 V
DDQ
Supply Voltage
V
DDQ
provides the power supply for the Flash memory and PSRAM I/O pins. This allows all
Outputs to be powered independently of the Flash memory and SRAM core power supplies,
V
DDF
and V
CCP
.
2.21 V
PPF
Program Supply Voltage
V
PPF
is both a control input and a power supply pin for the Flash memory. The two functions are
selected by the voltage range applied to the pin.
If V
PPF
is kept in a low voltage range (0V to V
DDQ
) V
PPF
is seen as a control input. In this case
a voltage lower than V
PPLK
gives an absolute protection against Program or Erase, while V
PPF
> V
PP1
enables these functions (see Tables
7
and
8
, Flash Memory DC Characteristics for the
relevant values). V
PPF
is only sampled at the beginning of a Program or Erase; a change in its
value after the operation has started does not have any effect and Program or Erase operations
continue.
If V
PPF
is in the range of V
PPH
it acts as a power supply pin. In this condition V
PPF
must be
stable until the Program/Erase algorithm is completed.
相關PDF資料
PDF描述
M36P0R9070E0ZACF 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
M36W0R6030B0 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
M36W0R6030B0ZAQ 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
M36W0R6030B0ZAQE 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
M36W0R6030B0ZAQF 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
相關代理商/技術參數
參數描述
M36P0R9070E0ZACF 制造商:Micron Technology Inc 功能描述:WIRELESS - Tape and Reel
M36P0R9070E1ZACE 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays
M36P0R9070E1ZACF 制造商:Micron Technology Inc 功能描述:WIRELESS - Tape and Reel
M36P0R9070N1ZSE 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays
M36P0R9070N1ZSF 制造商:Micron Technology Inc 功能描述:WIRELESS - Tape and Reel