參數(shù)資料
型號(hào)： M36LLR876B0
廠商： 意法半導(dǎo)體
英文描述： 256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
中文描述： 256 128兆位（多銀行，多層次，突發(fā)）64兆位閃存（突發(fā)）移動(dòng)存儲(chǔ)芯片，1.8V電源，多芯片封裝
文件頁(yè)數(shù)： 16/19頁(yè)
文件大?。?/td> 427K
代理商： M36LLR876B0
M36LLR8760T1, M36LLR8760D1, M36LLR8760M1, M36LLR8760B1
16/19
PACKAGE MECHANICAL
Figure 7. LFBGA88 8x10mm, 8x10 ball array - 0.8mm pitch, Bottom View Package Outline
Note: Drawing is not to scale.
Table 10. Stacked LFBGA88 8x10mm - 8x10 active ball array, 0.8mm pitch, Package Data
Symbol
millimeters
inches
Typ
Min
Max
Typ
Min
Max
A
1.400
0.0551
A1
0.200
0.0079
A2
1.000
0.0394
b
0.350
0.300
0.400
0.0138
0.0118
0.0157
D
8.000
7.900
8.100
0.3150
0.3110
0.3189
D1
5.600
–
–
0.2205
–
–
ddd
0.100
0.0039
E
10.000
9.900
10.100
0.3937
0.3898
0.3976
E1
7.200
–
–
0.2835
–
–
E2
8.800
–
–
0.3465
–
–
e
0.800
–
–
0.0315
–
–
FD
1.200
–
–
0.0472
–
–
FE
1.400
–
–
0.0551
–
–
SD
0.400
–
–
0.0157
–
–
SE
0.400
–
–
0.0157
–
–
FE1
0.600
–
–
0.0236
–
–
A2
A1
A
BGA-Z45
ddd
D
E
e
b
SE
FD
FE1
E2
D1
SD
BALL "A1"
E1
FE
e
相關(guān)PDF資料
PDF描述
M36LLR876B0E 256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
M36P0R9070E0 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
M36P0R9070E0ZAC 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
M36P0R9070E0ZACE 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
M36P0R9070E0ZACF 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
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參數(shù)描述
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