參數(shù)資料
型號(hào): M30LW128D110N6T
廠商: 意法半導(dǎo)體
英文描述: 128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product
中文描述: 128兆位(兩個(gè)64兆比特,x8/x16,統(tǒng)一座,快閃記憶體)3V電源,多記憶體產(chǎn)品
文件頁(yè)數(shù): 50/57頁(yè)
文件大?。?/td> 860K
代理商: M30LW128D110N6T
M30LW128D
50/57
Figure 23. Block Protect Flowchart and Pseudo Code
Note: 1. The Read Status Register command must be issued to the same address as the Block Protect command.
Write 01h
Block Address
AI07517b
YES
NO
b7 = 1
Start
Write 60h
Block Address
Write FFh
Read
Status Register
(1)
Block Protect
Sucessful
b3 = 1
b4, b5 = 1,1
b4 = 1
VPEN Invalid
Error
Invalid Command
Sequence Error
Block Protect
Error
YES
YES
YES
NO
NO
NO
Block Protect Command
– write 60h, Block Adress
– write 01h, Block Adress
do:
– read status register
while b7 = 1
If b3 = 1, VPEN Invalid Error
Read Memory Array Command:
– write FFh
If b4 = 1, b5 = 1 Invalid Command Sequence
Error
If b4 = 1, Block Protect Error
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PDF描述
M30LW128D110ZA1T 128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product
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M30LW128D110ZE1T 128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product
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