參數(shù)資料
型號(hào): M30LW128D110N6T
廠商: 意法半導(dǎo)體
英文描述: 128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product
中文描述: 128兆位(兩個(gè)64兆比特,x8/x16,統(tǒng)一座,快閃記憶體)3V電源,多記憶體產(chǎn)品
文件頁數(shù): 37/57頁
文件大?。?/td> 860K
代理商: M30LW128D110N6T
37/57
M30LW128D
Figure 17. TBGA64 - 10x13mm, 8 x 8 ball array 1mm pitch, Package Outline
Note: Drawing is not to scale.
Table 22. TBGA64 - 10x13mm, 8 x 8 ball array, 1 mm pitch, Package Mechanical Data
Symbol
millimeters
inches
Typ
Min
Max
Typ
Min
Max
A
1.200
0.0472
A1
0.300
0.200
0.350
0.0118
0.0079
0.0138
A2
0.850
0.0335
b
0.400
0.500
0.0157
0.0197
D
10.000
9.900
10.100
0.3937
0.3898
0.3976
D1
7.000
0.2756
ddd
0.100
0.0039
e
1.000
0.0394
E
13.000
12.900
13.100
0.5118
0.5079
0.5157
E1
7.000
0.2756
FD
1.500
0.0591
FE
3.000
0.1181
SD
0.500
0.0197
SE
0.500
0.0197
E1
E
D1
D
e
b
SD
SE
A2
A1
A
BGA-Z23
ddd
FD
FE
BALL "A1"
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參數(shù)描述
M30LW128D110ZA1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product
M30LW128D110ZA6 功能描述:閃存 Two 8Mx8 or 4Mx16 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M30LW128D-110ZA6 制造商:STMicroelectronics 功能描述:
M30LW128D110ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product
M30LW128D110ZE1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product