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參數(shù)資料
| 型號： | M30LW128D110N1T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product |
| 中文描述： | 128兆位（兩個64兆比特，x8/x16，統(tǒng)一座，快閃記憶體）3V電源，多記憶體產(chǎn)品 |
| 文件頁數(shù)： | 21/57頁 |
| 文件大?。?/td> | 860K |
| 代理商： | M30LW128D110N1T |
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M30LW128D
Table 6. Configuration Codes
Note: 1. DQ2-DQ7 are reserved
2. When STS pin is pulsing it remains Low for a typical time of 250ns.
Table 7. Read Electronic Signature
Note: 1. SBA is the Start Base Address of each block, PRD is Protection Register Data.
2. Base Address, refer to Figure 8 and Tables 8 and 9 for more information.
A23 must be Low to address the customer’s Protection
Register. The other Protection Register is reserved.
3. A0 is not used in Read Electronic Signature in either x8 or x16 mode. The data is always presented on the lower byte in x16 mode.
Configuration
Code
DQ1
DQ2
Mode
STS Pin
Description
00h
0
0
Ready/Busy
V
OL
during P/E
operations
Hi-Z when the
memory is ready
The STS pin is Low during Program and
Erase operations and high impedance when
the memory is ready for any Read, Program
or Erase operation.
01h
0
1
Pulse on Erase
complete
Pulse Low then High
when operation
completed
(2)
Supplies a system interrupt pulse at the end
of a Block Erase operation.
02h
1
0
Pulse on
Program
complete
Supplies a system interrupt pulse at the end
of a Program operation.
03h
1
1
Pulse on Erase
or Program
complete
Supplies a system interrupt pulse at the end
of a Block Erase or Program operation.
Code
Bus Width
Address (A23-A1)
(3)
Data (DQ15-DQ0)
Manufacturer Code
x8
000000h
20h
x16
0020h
Device Code
x8
000001h
17h
x16
8817h
Block Protection Status
x8
SBA
(1)
+02h
00h (Block Unprotected)
01h (Block Protected)
x16
0000h (Block Unprotected)
0001h (Block Protected)
Protection Register
x8, x16
000080h
(2)
PRD
(1)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M30LW128D110N6T | 128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product |
| M30LW128D110ZA1T | 128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product |
| M30LW128D110ZA6T | 128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product |
| M30LW128D110ZE1T | 128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product |
| M30LW128D110ZE6T | 128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M30LW128D110N6 | 功能描述:閃存 Two 8Mx8 or 4Mx16 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M30LW128D110N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product |
| M30LW128D110ZA1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product |
| M30LW128D110ZA6 | 功能描述:閃存 Two 8Mx8 or 4Mx16 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M30LW128D-110ZA6 | 制造商:STMicroelectronics 功能描述: |
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