參數(shù)資料
型號： M30L0R8000T0ZAQF
廠商： 意法半導(dǎo)體
英文描述： 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
中文描述： 256兆位（16Mb的x16插槽，多銀行，多層次，多突發(fā)）1.8V電源快閃記憶體
文件頁數(shù)： 40/83頁
文件大?。?/td> 1363K
代理商： M30L0R8000T0ZAQF
M30L0R8000T0, M30L0R8000B0
40/83
DC AND AC PARAMETERS
This section summarizes the operating measure-
ment conditions, and the DC and AC characteris-
tics of the device. The parameters in the DC and
AC characteristics Tables that follow, are derived
from tests performed under the Measurement
Conditions summarized in
Table 19., Operating
and AC Measurement Conditions
. Designers
should check that the operating conditions in their
circuit match the operating conditions when rely-
ing on the quoted parameters.
Table 19. Operating and AC Measurement Conditions
Figure 8. AC Measurement I/O Waveform
Figure 9. AC Measurement Load Circuit
Table 20. Capacitance
Note: Sampled only, not 100% tested.
Parameter
M30L0R8000T0/B
Units
85
Min
Max
V
DD
Supply Voltage
1.7
2.0
V
V
DDQ
Supply Voltage
1.7
2.0
V
V
PP
Supply Voltage (Factory environment)
8.5
9.5
V
V
PP
Supply Voltage (Application environment)
–0.4
V
DDQ
+0.4
V
Ambient Operating Temperature
–25
85
°C
Load Capacitance (C
L
)
30
pF
Input Rise and Fall Times
5
ns
Input Pulse Voltages
0 to V
DDQ
V
Input and Output Timing Ref. Voltages
V
DDQ
/2
V
AI06161
VDDQ
0V
VDDQ/2
AI06162
VDDQ
CL
CL includes JIG capacitance
16.7k
DEVICE
UNDER
TEST
0.1μF
VDD
0.1μF
VDDQ
16.7k
Symbol
Parameter
Test Condition
Min
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
8
pF
C
OUT
Output Capacitance
V
OUT
= 0V
8
12
pF
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