參數(shù)資料
型號(hào)： M30L0R8000T0ZAQF
廠商： 意法半導(dǎo)體
英文描述： 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
中文描述： 256兆位（16Mb的x16插槽，多銀行，多層次，多突發(fā)）1.8V電源快閃記憶體
文件頁(yè)數(shù)： 28/83頁(yè)
文件大?。?/td> 1363K
代理商： M30L0R8000T0ZAQF
M30L0R8000T0, M30L0R8000B0
28/83
chronous read operations. When the Valid Clock
Edge bit is Low (set to ’0’) the falling edge of the
Clock is the active edge. When the Valid Clock
Edge bit is High (set to ’1’) the rising edge of the
Clock is the active edge.
Wrap Burst Bit (CR3)
The Wrap Burst bit, CR3, is used to select be-
tween wrap and no wrap. Synchronous burst
reads can be confined inside the 4, 8 or 16 Word
boundary (wrap) or overcome the boundary (no
wrap).
When the Wrap Burst bit is Low (set to ‘0’) the
burst read wraps. When it is High (set to ‘1’) the
burst read does not wrap.
Burst length Bits (CR2-CR0)
The Burst Length bits are used to set the number
of Words to be output during a Synchronous Burst
Read operation as result of a single address latch
cycle.
They can be set for 4 Words, 8 Words, 16 Words
or continuous burst, where all the Words are read
sequentially. In continuous burst mode the burst
sequence can cross bank boundaries.
In continuous burst mode, in 4, 8 or 16 Words no-
wrap, depending on the starting address, the de-
vice asserts the WAIT signal to indicate that a de-
lay is necessary before the data is output.
If the starting address is aligned to an 8 Word
boundary no WAIT states are needed and the
WAIT output is not asserted.
If the starting address is not aligned to the 8 Word
boundary, WAIT will be asserted when the burst
sequence crosses the first 16 Word boundary to
indicate that the device needs an internal delay to
read the successive Words in the array.
WAIT will be asserted only once during a continu-
ous burst access. See also
Table 12., Burst Type
Definition
.
CR14, CR5
and
CR4
are reserved for future use.
相關(guān)PDF資料
PDF描述
M30L0R8000T0ZAQT 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQE AB 35C 7#12,28#16 PIN RECP
M30L0R8000B0ZAQE 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000B0ZAQF CAP 0.1UF 50V 10% X7R DIP-2 BULK S-MIL-C-39014
M30L0R8000B0ZAQT 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
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參數(shù)描述
M30L0R8000T0ZAQT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L40C 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual Common-Cathode Schottky Rectifier
M30L40C-E3/4W 功能描述:肖特基二極管與整流器 40 Volt 30 Amp Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
M30L45C-E3/4W 功能描述:肖特基二極管與整流器 45 Volt 30 Amp Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
M30LLASSM 制造商:Apex Tool Group 功能描述:Syringe; Manual Assemble Calibrated Syringe; 30 cc 制造商:Cooper Hand Tools / Weller 功能描述:CALIBRATED SYRINGE, 30CC; Dispenser Type:Syringe; Volume:30cc; Accessory Type:Calibrated Syringe
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