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參數(shù)資料
| 型號： | M30L0R8000B0ZAQT |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| 中文描述： | 256兆位（16Mb的x16插槽，多銀行，多層次，多突發(fā)）1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 12/83頁 |
| 文件大?。?/td> | 1363K |
| 代理商： | M30L0R8000B0ZAQT |
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M30L0R8000T0, M30L0R8000B0
12/83
V
SS
Ground.
V
SS
ground is the reference for the
core supply. It must be connected to the system
ground.
V
SSQ
Ground.
V
SSQ
ground is the reference for
the input/output circuitry driven by V
DDQ
. V
SSQ
must be connected to V
SS
Note: Each device in a system should have
V
DD
,
V
DDQ
and V
PP
decoupled with a 0.1μF ce-
ramic capacitor close to the pin (high frequen-
cy, inherently low inductance capacitors
should be as close as possible to the pack-
age). See
Figure 9., AC Measurement Load Cir-
cuit
. The PCB track widths should be sufficient
to carry the required V
PP
program and erase
currents.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M30L0R8000B0ZAQ | 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0 | 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000B0 | 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30LW128D | 128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product |
| M30LW128D110N1T | 128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M30L0R8000T0 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0ZAQ | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0ZAQE | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0ZAQF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0ZAQT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
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