參數(shù)資料
型號(hào): M30L0R7000xx
廠商: 意法半導(dǎo)體
英文描述: 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
中文描述: 128兆位(8兆x16插槽,多銀行,多層次,多突發(fā)),1.8V電源快閃記憶體
文件頁數(shù): 8/83頁
文件大?。?/td> 1329K
代理商: M30L0R7000XX
M30L0R7000T0, M30L0R7000B0
8/83
Figure 3. TFBGA Connections (Top view through package)
AI08303
A20
NC
DQ5
NC
NC
WAIT
D
A13
A11
DU
A18
A4
A3
C
A12
A21
NC
NC
B
DU
A22
K
DU
DU
A5
A
8
7
6
5
4
3
2
1
A19
G
F
E
V
SS
V
DD
V
SS
NC
A17
NC
V
PP
NC
A2
WP
L
A10
A15
A1
A7
A6
RP
W
A8
A14
A16
A0
DQ8
DQ2
DQ10
DQ13
NC
NC
A9
NC
V
DDQ
DQ4
NC
DU
J
V
DDQ
NC
H
NC
DQ0
DQ7
DQ14
NC
M
L
K
DQ3
DQ12
G
DQ9
DQ11
DQ6
E
NC
NC
V
DDQ
NC
V
SS
NC
V
SS
V
DD
V
SS
V
SS
V
SS
V
SS
DU
DU
DU
DQ1
DQ15
相關(guān)PDF資料
PDF描述
M30L0R7000B0 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000B0ZAQ 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000B0ZAQE 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000B0ZAQF 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000T0ZAQE AB 35C 7#12,28#16 PIN RECP
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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M30L0R8000B0ZAQ 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000B0ZAQE 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000B0ZAQF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000B0ZAQT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory