參數(shù)資料
型號(hào): M30L0R7000B0ZAQ
廠商: 意法半導(dǎo)體
英文描述: 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
中文描述: 128兆位(8兆x16插槽,多銀行,多層次,多突發(fā)),1.8V電源快閃記憶體
文件頁(yè)數(shù): 41/83頁(yè)
文件大?。?/td> 1329K
代理商: M30L0R7000B0ZAQ
41/83
M30L0R7000T0, M30L0R7000B0
Figure 11. Asynchronous Page Read AC Waveforms
AI08334
A2-A22
E
G
A0-A1
VALID ADD.
L
DQ0-DQ15
VALID ADD.
VALID ADD.
VALID ADDRESS
VALID ADDRESS
VALID
DATA
tLHAX
tAVLH
tLLQV
tAVQV1
tGLQX
tLLLH
tELLH
WAIT
tAVAV
tELQV
tELQX
tELTV
tGLQV
(1)
Note 1. WAIT is active Low.
Valid Address Latch
Outputs
Enabled
Valid Data
Standby
Hi-Z
tGLTV
VALID
DATA
VALID
DATA
VALID
DATA
相關(guān)PDF資料
PDF描述
M30L0R7000B0ZAQE 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000B0ZAQF 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000T0ZAQE AB 35C 7#12,28#16 PIN RECP
M30L0R7000T0ZAQF CAP 0.1UF 50V 10% X7R DIP-2 BULK R-MIL-C-39014
M30L0R7000T0ZAQT CAP 0.22UF 50V 20% X7R DIP-2 BULK R-MIL-C-39014
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M30L0R7000B0ZAQE 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000B0ZAQF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000B0ZAQT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000T0 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000T0ZAQ 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory