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參數(shù)資料
| 型號(hào)： | M2V56D40ATP-10L |
| 廠(chǎng)商： | Mitsubishi Electric Corporation |
| 英文描述： | 256M Double Data Rate Synchronous DRAM |
| 中文描述： | 256M雙數(shù)據(jù)速率同步DRAM |
| 文件頁(yè)數(shù)： | 21/40頁(yè) |
| 文件大?。?/td> | 768K |
| 代理商： | M2V56D40ATP-10L |
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21
MITSUBISHI ELECTRIC
Mar. '02
MITSUBISHI LSIs
DDR SDRAM
(Rev.1.44)
M2S56D20/ 30/ 40ATP -75AL, -75A, -75L, -75, -10L, -10
M2S56D20/ 30/ 40AKT -75AL, -75A, -75L, -75, -10L, -10
256M Double Data Rate Synchronous DRAM
AC TIMING REQUIREMENTS(Continued)
(Ta=0 ~ 70
o
C, VDD = VDDQ = 2.5V +0.2V, VSS = VSSQ = 0V, unless otherwise noted)
Min.
45
Max
Min.
45
Max
Min.
50
Max
tRAS
Row Active time
120,000
120,000
120,000
ns
tRC
Row Cycle time(operation)
65
65
70
ns
tRFC
Auto Ref. to Active/Auto Ref. command period
75
75
80
ns
tRCD
Row to Column Delay
20
20
20
ns
tRP
Row Precharge time
20
20
20
ns
tRRD
Act to Act Delay time
15
15
15
ns
tWR
Write Recovery time
15
15
15
ns
tDAL
Auto Precharge write recovery + precharge time
35
35
35
ns
tWTR
Internal Write to Read Command Delay
1
1
1
tCK
tXSNR Exit Self Ref. to non-Read command
75
75
80
ns
tXSRD
Exit Self Ref. to -Read command
200
200
200
tCK
tXPNR Exit Power down to command
1
1
1
tCK
tXPRD
Exit Power down to -Read command
1
1
1
tCK
18
tREFI
Average Periodic Refresh interval
7.8
7.8
7.8
us
17
-10
Unit
Notes
Symbol
AC Characteristics Parameter
-75A
-75
Output Load Condition
DQ
Output Timing
Measurement
Reference Point
V
REF
V
REF
DQS
V
OUT
V
REF
30pF
50W
V
TT
=V
REF
Zo=50W
CAPACITANCE
(Ta=0 ~ 70
o
C, VDD = VDDQ = 2.5V + 0.2V, VSS = VSSQ = 0V, unless otherwise noted)
Min. Max.
2.0
2.0
2.0
4.0
CI(A)
CI(C)
CI(K)
CI/O
Input Capacitance, address pin
Input Capacitance, control pin
Input Capacitance, CLK pin
I/O Capacitance, I/O, DQS, DM pin
VI=1.25v
f=100MHz
VI=25mVrms
3.0
3.0
3.0
5.0
pF
pF
pF
pF
11
11
11
11
0.25
0.50
0.50
Notes
Limits
Symbol
Parameter
Test Condition
Unit
Delta
Cap.(Max.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M2V56D40ATP-75 | 256M Double Data Rate Synchronous DRAM |
| M2V56D40ATP-75A | 256M Double Data Rate Synchronous DRAM |
| M2V56D40ATP-75AL | 256M Double Data Rate Synchronous DRAM |
| M2V56D40ATP-75L | 256M Double Data Rate Synchronous DRAM |
| M2V56D40ATP75A | 256M Double Data Rate Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M2V56D40ATP-75 | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM |
| M2V56D40ATP75A | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM |
| M2V56D40ATP-75A | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM |
| M2V56D40ATP-75AL | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM |
| M2V56D40ATP-75L | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM |
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