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參數(shù)資料
| 型號(hào)： | M2V56D40ATP-10L |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 256M Double Data Rate Synchronous DRAM |
| 中文描述： | 256M雙數(shù)據(jù)速率同步DRAM |
| 文件頁(yè)數(shù)： | 18/40頁(yè) |
| 文件大?。?/td> | 768K |
| 代理商： | M2V56D40ATP-10L |
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18
MITSUBISHI ELECTRIC
Mar. '02
MITSUBISHI LSIs
DDR SDRAM
(Rev.1.44)
M2S56D20/ 30/ 40ATP -75AL, -75A, -75L, -75, -10L, -10
M2S56D20/ 30/ 40AKT -75AL, -75A, -75L, -75, -10L, -10
256M Double Data Rate Synchronous DRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDD
Supply Voltage
VDDQ
Supply Voltage for Output
VI
Input Voltage
VO
Output Voltage
IO
Output Current
Pd
Power Dissipation
Topr
Operating Temperature
Tstg
Storage Temperature
DC OPERATING CONDITIONS
(Ta=0 ~ 70
o
C, unless otherwise noted)
Min.
2.3
2.3
Typ.
2.5
2.5
Max.
2.7
2.7
VDD
VDDQ
VREF
VIH(DC)
VIL(DC)
VIN(DC)
VID(DC) Input Differential Voltage, CLK and /CLK
VTT
I/O Termination Voltage
Supply Voltage
Supply Voltage for Output
Input Reference Voltage
High-Level Input Voltage
Low-Level Input Voltage
Input Voltage Level, CLK and /CLK
V
V
V
V
V
V
V
V
0.49*VDDQ 0.50*VDDQ 0.51*VDDQ
VREF + 0.15
-0.3
-0.3
0.36
VREF - 0.04
5
VDDQ+0.3
VREF - 0.15
VDDQ + 0.3
VDDQ + 0.6
VREF + 0.04
7
6
Notes
Limits
Symbol
Parameter
Unit
Conditions
with respect to VSS
with respect to VSSQ
with respect to VSS
with respect to VSSQ
Ratings
-0.5 ~ 3.7
-0.5 ~ 3.7
-0.5 ~ VDD+0.5
-0.5 ~ VDDQ+0.5
50
1000
0 ~ 70
-65 ~ 150
Unit
V
V
V
V
mA
mW
Ta = 25
o
C
o
C
o
C
AC OVERSHOOT/UNDERSHOOT SPECIFICATION
Parameter
Specification
1.6V
1.6V
4.5 V-ns
4.5 V-ns
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and VDD must be less than or euqal to
The area between the undershoot signal and VSS must be less than or euqal to
V
5
4
3
2
1
VSS(0)
-1
-2
-3
0
0.5 1 1.5 2 2.5 3 3.5 4
4.5 5 5.5 6 6.5 7
5.625
7.5
Maximum Amplitude
Overshoot
Undershoot
Maximum Amplitude
Area (max.4.5V-ns)
VDD
Time (ns)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M2V56D40ATP-75 | 256M Double Data Rate Synchronous DRAM |
| M2V56D40ATP-75A | 256M Double Data Rate Synchronous DRAM |
| M2V56D40ATP-75AL | 256M Double Data Rate Synchronous DRAM |
| M2V56D40ATP-75L | 256M Double Data Rate Synchronous DRAM |
| M2V56D40ATP75A | 256M Double Data Rate Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M2V56D40ATP-75 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM |
| M2V56D40ATP75A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM |
| M2V56D40ATP-75A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM |
| M2V56D40ATP-75AL | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM |
| M2V56D40ATP-75L | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM |
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