參數(shù)資料
型號(hào): M29W160ET90ZA6F
廠商: 意法半導(dǎo)體
英文描述: CLAMP
中文描述: 16兆位(含2Mb x8或1兆x16插槽,引導(dǎo)塊)3V電源快閃記憶體
文件頁(yè)數(shù): 30/40頁(yè)
文件大?。?/td> 665K
代理商: M29W160ET90ZA6F
M29W160ET, M29W160EB
30/40
APPENDIX B. COMMON FLASH INTERFACE (CFI)
The Common Flash Interface is a JEDEC ap-
proved, standardized data structure that can be
read from the Flash memory device. It allows a
system software to query the device to determine
various electrical and timing parameters, density
information and functions supported by the mem-
ory. The system can interface easily with the de-
vice, enabling the software to upgrade itself when
necessary.
When the CFI Query Command is issued the de-
vice enters CFI Query mode and the data structure
is read from the memory. Tables 21, 22, 23, 24, 25
and 26 show the addresses used to retrieve the
data.
The CFI data structure also contains a security
area where a 64 bit unique security number is writ-
ten (see Table 26, Security Code area). This area
can be accessed only in Read mode by the final
user. It is impossible to change the security num-
ber after it has been written by ST. Issue a Read
command to return to Read mode.
Note:
The Common Flash Interface is only avail-
able for Temperature range 6 (–40 to 85°C).
Table 21. Query Structure Overview
Note: Query data are always presented on the lowest order data outputs.
Table 22. CFI Query Identification String
Note: Query data are always presented on the lowest order data outputs (DQ7-DQ0) only. DQ8-DQ15 are ‘0’.
Address
Sub-section Name
Description
x16
x8
10h
20h
CFI Query Identification String
Command set ID and algorithm data offset
1Bh
36h
System Interface Information
Device timing & voltage information
27h
4Eh
Device Geometry Definition
Flash device layout
40h
80h
Primary Algorithm-specific Extended
Query table
Additional information specific to the Primary
Algorithm (optional)
61h
C2h
Security Code Area
64 bit unique device number
Address
Data
Description
Value
x16
x8
10h
20h
0051h
"Q"
11h
22h
0052h
Query Unique ASCII String "QRY"
"R"
12h
24h
0059h
"Y"
13h
26h
0002h
Primary Algorithm Command Set and Control Interface ID code 16 bit
ID code defining a specific algorithm
AMD
Compatible
14h
28h
0000h
15h
2Ah
0040h
Address for Primary Algorithm extended Query table (see Table 24)
P = 40h
16h
2Ch
0000h
17h
2Eh
0000h
Alternate Vendor Command Set and Control Interface ID Code second
vendor - specified algorithm supported
NA
18h
30h
0000h
19h
32h
0000h
Address for Alternate Algorithm extended Query table
NA
1Ah
34h
0000h
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M29W160ET90ZA6T CLAMP
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29W160ET90ZA6T 功能描述:閃存 16M (2Mx8 or 1Mx16) RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29W160FB 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory
M29W160FB70N3E 功能描述:IC FLASH 16MB 70NS 48TSOP AUTO RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:Axcell™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步,DDR II 存儲(chǔ)容量:18M(1M x 18) 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA(13x15) 包裝:托盤 其它名稱:71P71804S200BQ
M29W160FB70N3F 功能描述:IC FLASH 16MBIT 70NS 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:Axcell™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步,DDR II 存儲(chǔ)容量:18M(1M x 18) 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA(13x15) 包裝:托盤 其它名稱:71P71804S200BQ
M29W160FB70ZA3F 制造商:Micron Technology Inc 功能描述: