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參數(shù)資料
| 型號(hào)： | M29W160DB70ZA6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory |
| 中文描述： | 16兆位的2Mb x8或1兆x16插槽，啟動(dòng)塊3V電源快閃記憶體 |
| 文件頁(yè)數(shù)： | 31/40頁(yè) |
| 文件大?。?/td> | 665K |
| 代理商： | M29W160DB70ZA6T |
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M29W160ET, M29W160EB
Table 23. CFI Query System Interface Information
Address
Data
Description
Value
x16
x8
1Bh
36h
0027h
V
CC
Logic Supply Minimum Program/Erase voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
2.7V
1Ch
38h
0036h
V
CC
Logic Supply Maximum Program/Erase voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
3.6V
1Dh
3Ah
0000h
V
PP
[Programming] Supply Minimum Program/Erase voltage
NA
1Eh
3Ch
0000h
V
PP
[Programming] Supply Maximum Program/Erase voltage
NA
1Fh
3Eh
0004h
Typical timeout per single Byte/Word program = 2
n
μs
16μs
20h
40h
0000h
Typical timeout for minimum size write buffer program = 2
n
μs
NA
21h
42h
000Ah
Typical timeout per individual block erase = 2
n
ms
1s
22h
44h
0000h
Typical timeout for full chip erase = 2
n
ms
NA
23h
46h
0004h
Maximum timeout for Byte/Word program = 2
n
times typical
256μs
24h
48h
0000h
Maximum timeout for write buffer program = 2
n
times typical
NA
25h
4Ah
0003h
Maximum timeout per individual block erase = 2
n
times typical
8s
26h
4Ch
0000h
Maximum timeout for chip erase = 2
n
times typical
NA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M29W160DB90N1T | Dual Positive-Edge-Triggered D-Type Flip-Flop 8-DSBGA -40 to 85 |
| M29W160DB90N6T | 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory |
| M29W160DB90ZA1T | 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory |
| M29W160DB90ZA6T | DUAL 2-INPUT EXCLUSIVE-OR GATE 8-DSBGA -40 to 85 |
| M29W160DT | 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29W160DB90M1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory |
| M29W160DB90M1E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory |
| M29W160DB90M1F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory |
| M29W160DB90M1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory |
| M29W160DB90M6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory |
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