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參數資料
| 型號： | M29W160DB70ZA6T |
| 廠商： | 意法半導體 |
| 英文描述： | 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory |
| 中文描述： | 16兆位的2Mb x8或1兆x16插槽，啟動塊3V電源快閃記憶體 |
| 文件頁數： | 18/40頁 |
| 文件大?。?/td> | 665K |
| 代理商： | M29W160DB70ZA6T |
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M29W160ET, M29W160EB
18/40
Note that the Program command cannot change a
bit set to ’0’ back to ’1’ and attempting to do so will
set DQ5 to ‘1’. A Bus Read operation to that ad-
dress will show the bit is still ‘0’. One of the Erase
commands must be used to set all the bits in a
block or in the whole memory from ’0’ to ’1’
Erase Timer Bit (DQ3).
The Erase Timer Bit can
be used to identify the start of Program/Erase
Controller operation during a Block Erase com-
mand. Once the Program/Erase Controller starts
erasing the Erase Timer Bit is set to ’1’. Before the
Program/Erase Controller starts the Erase Timer
Bit is set to ’0’ and additional blocks to be erased
may be written to the Command Interface. The
Erase Timer Bit is output on DQ3 when the Status
Register is read.
Alternative Toggle Bit (DQ2).
The
Toggle Bit can be used to monitor the Program/
Erase controller during Erase operations. The Al-
ternative Toggle Bit is output on DQ2 when the
Status Register is read.
Alternative
During Chip Erase and Block Erase operations the
Toggle Bit changes from ’0’ to ’1’ to ’0’, etc., with
successive Bus Read operations from addresses
within the blocks being erased. A protected block
is treated the same as a block not being erased.
Once the operation completes the memory returns
to Read mode.
During Erase Suspend the Alternative Toggle Bit
changes from ’0’ to ’1’ to ’0’, etc. with successive
Bus Read operations from addresses within the
blocks being erased. Bus Read operations to ad-
dresses within blocks not being erased will output
the memory cell data as if in Read mode.
After an Erase operation that causes the Error Bit
to be set the Alternative Toggle Bit can be used to
identify which block or blocks have caused the er-
ror. The Alternative Toggle Bit changes from ’0’ to
’1’ to ’0’, etc. with successive Bus Read Opera-
tions from addresses within blocks that have not
erased correctly. The Alternative Toggle Bit does
not change if the addressed block has erased cor-
rectly.
Table 7. Status Register Bits
Note: Unspecified data bits should be ignored.
Operation
Address
DQ7
DQ6
DQ5
DQ3
DQ2
RB
Program
Any Address
DQ7
Toggle
0
–
–
0
Program During Erase
Suspend
Any Address
DQ7
Toggle
0
–
–
0
Program Error
Any Address
DQ7
Toggle
1
–
–
0
Chip Erase
Any Address
0
Toggle
0
1
Toggle
0
Block Erase before
timeout
Erasing Block
0
Toggle
0
0
Toggle
0
Non-Erasing Block
0
Toggle
0
0
No Toggle
0
Block Erase
Erasing Block
0
Toggle
0
1
Toggle
0
Non-Erasing Block
0
Toggle
0
1
No Toggle
0
Erase Suspend
Erasing Block
1
No Toggle
0
–
Toggle
1
Non-Erasing Block
Data read as normal
1
Erase Error
Good Block Address
0
Toggle
1
1
No Toggle
0
Faulty Block Address
0
Toggle
1
1
Toggle
0
相關PDF資料 |
PDF描述 |
|---|---|
| M29W160DB90N1T | Dual Positive-Edge-Triggered D-Type Flip-Flop 8-DSBGA -40 to 85 |
| M29W160DB90N6T | 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory |
| M29W160DB90ZA1T | 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory |
| M29W160DB90ZA6T | DUAL 2-INPUT EXCLUSIVE-OR GATE 8-DSBGA -40 to 85 |
| M29W160DT | 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| M29W160DB90M1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory |
| M29W160DB90M1E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory |
| M29W160DB90M1F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory |
| M29W160DB90M1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory |
| M29W160DB90M6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory |
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