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參數(shù)資料
| 型號(hào)： | M29W160BT90ZA6 |
| 廠商： | NUMONYX |
| 元件分類： | PROM |
| 英文描述： | 1M X 16 FLASH 2.7V PROM, 90 ns, PBGA48 |
| 封裝： | 0.80 MM PITCH, LFBGA-48 |
| 文件頁數(shù)： | 9/25頁 |
| 文件大?。?/td> | 171K |
| 代理商： | M29W160BT90ZA6 |
17/25
M29W160BT, M29W160BB
Figure 10. Write AC Waveforms, Write Enable Controlled
AI02923
E
G
W
A0-A19/
A–1
DQ0-DQ7/
DQ8-DQ15
VALID
VCC
tVCHEL
tWHEH
tWHWL
tELWL
tAVWL
tWHGL
tWLAX
tWHDX
tAVAV
tDVWH
tWLWH
tGHWL
RB
tWHRL
Table 16. Write AC Characteristics, Write Enable Controlled
(TA = 0 to 70°C or –40 to 85°C)
Note: 1. Sampled only, not 100% tested.
Symbol
Alt
Parameter
M29W160B
Unit
70
90
120
tAVAV
tWC
Address Valid to Next Address Valid
Min
70
90
120
ns
tELWL
tCS
Chip Enable Low to Write Enable Low
Min
0
ns
tWLWH
tWP
Write Enable Low to Write Enable High
Min
45
50
ns
tDVWH
tDS
Input Valid to Write Enable High
Min
45
50
ns
tWHDX
tDH
Write Enable High to Input Transition
Min
0
ns
tWHEH
tCH
Write Enable High to Chip Enable High
Min
0
ns
tWHWL
tWPH
Write Enable High to Write Enable Low
Min
30
ns
tAVWL
tAS
Address Valid to Write Enable Low
Min
0
ns
tWLAX
tAH
Write Enable Low to Address Transition
Min
45
50
ns
tGHWL
Output Enable High to Write Enable Low
Min
0
ns
tWHGL
tOEH
Write Enable High to Output Enable Low
Min
0
ns
tWHRL
(1)
tBUSY
Program/Erase Valid to RB Low
Max
30
35
50
ns
tVCHEL
tVCS
VCC High to Chip Enable Low
Min
50
s
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| M29W160BT90ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory |
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