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參數(shù)資料
| 型號： | M29W022BB55K6T |
| 廠商： | 意法半導體 |
| 英文描述： | 2 Mbit 256Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| 中文描述： | 2兆位的256Kb × 8，啟動塊低壓單電源閃存 |
| 文件頁數(shù)： | 12/20頁 |
| 文件大小： | 123K |
| 代理商： | M29W022BB55K6T |
M29W022BT, M29W022BB
12/20
Table 11. DC Characteristics
(T
A
= 0 to 70
°
C or –40 to 85
°
C)
Symbol
Note: 1. Sampled only, not 100% tested.
Parameter
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
CC
±
1
μ
A
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
V
CC
±
1
μ
A
I
CC1
Supply Current (Read)
E = V
IL
, G = V
IH
, f = 6MHz
10
mA
I
CC2
Supply Current (Standby)
E = V
CC
±
0.2V
100
μ
A
I
CC3(1)
Supply Current (Program/Erase)
Program/Erase
Controller active
20
mA
V
IL
Input Low Voltage
–0.5
0.8
V
V
IH
Input High Voltage
0.7V
CC
V
CC
+ 0.3
V
V
OL
Output Low Voltage
I
OL
= 1.8mA
0.45
V
V
OH
Output High Voltage
I
OH
= –100
μ
A
V
CC
– 0.4
V
V
ID
Identification Voltage
11.5
12.5
V
I
ID
Identification Current
A9 = V
ID
100
μ
A
V
LKO(1)
Program/Erase Lockout Supply
Voltage
1.8
2.3
V
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M29W022BB55NZ1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mbit 256Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W022BB55NZ6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mbit 256Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W022BB70K1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mbit 256Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W022BB70K6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mbit 256Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W022BB70NZ1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mbit 256Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
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