參數(shù)資料
型號(hào): M29W022BT
廠商: 意法半導(dǎo)體
英文描述: 2 Mbit 256Kb x8, Boot Block Low Voltage Single Supply Flash Memory
中文描述: 2兆位的256Kb × 8,啟動(dòng)塊低壓?jiǎn)坞娫撮W存
文件頁(yè)數(shù): 1/20頁(yè)
文件大?。?/td> 123K
代理商: M29W022BT
1/20
March 2000
M29W022BT
M29W022BB
2 Mbit (256Kb x8, Boot Block)
Low Voltage Single Supply Flash Memory
I
SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
I
ACCESS TIME: 55ns
I
PROGRAMMING TIME
– 10
μ
s by Byte typical
I
7 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 4 Main Blocks
I
PROGRAM/ERASE CONTROLLER
– Embedded Byte Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
I
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
I
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
I
LOW POWER CONSUMPTION
– Standby and Automatic Standby
I
100,000 PROGRAM/ERASE CYCLES per
BLOCK
I
20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code M29W022BT: C4h
– Bottom Device Code M29W022BB: C3h
TSOP32 (NZ)
8 x 14mm
PLCC32 (K)
Figure 1. Logic Diagram
AI02971
18
A0-A17
W
DQ0-DQ7
VCC
M29W022BT
M29W022BB
E
VSS
8
G
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