- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄359035 > M29F512B70K1T (意法半導(dǎo)體) 512 Kbit 64Kb x8, Bulk Single Supply Flash Memory PDF資料下載
參數(shù)資料
| 型號(hào)： | M29F512B70K1T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 512 Kbit 64Kb x8, Bulk Single Supply Flash Memory |
| 中文描述： | 512千位64Kb的× 8，散單電源閃存 |
| 文件頁(yè)數(shù)： | 5/16頁(yè) |
| 文件大小： | 136K |
| 代理商： | M29F512B70K1T |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)當(dāng)前第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)
5/16
M29F512B
Table 4. Commands
Note:
X Don’t Care, PA Program Address, PD Program Data.
All values in the table are in hexadecimal.
The Command Interface only uses address bits A0-A10 to verify the commands, the upper address bits are Don’t Care.
Read/Reset.
After a Read/Reset command, read the memory as normal until another command is issued.
Auto Select.
After an Auto Select command, read Manufacturer ID or Device ID.
Program, Unlock Bypass Program, Chip Erase.
After these commands read the Status Register until the Program/Erase Controller com-
pletes and the memory returns to Read Mode.
Unlock Bypass.
After the Unlock Bypass command issue Unlock Bypass Program or Unlock Bypass Reset commands.
Unlock Bypass Reset.
After the Unlock Bypass Reset command read the memory as normal until another command is issued.
Command
L
Bus Write Operations
1st
2nd
3rd
4th
5th
6th
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Read/Reset
1
X
F0
3
555
AA
2AA
55
X
F0
Auto Select
3
555
AA
2AA
55
555
90
Program
4
555
AA
2AA
55
555
A0
PA
PD
Unlock Bypass
3
555
AA
2AA
55
555
20
Unlock Bypass
Program
2
X
A0
PA
PD
Unlock Bypass Reset
2
X
90
X
00
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
From the Auto Select mode the Manufacturer
Code can be read using a Bus Read operation
with A0 = V
IL
and A1 = V
IL
. The other address bits
may be set to either V
IL
or V
IH
. The Manufacturer
Code for STMicroelectronics is 20h.
The Device Code can be read using a Bus Read
operation with A0 = V
IH
and A1 = V
IL
. The other
address bits may be set to either V
IL
or V
IH
. The
Device Code for the M29F512B is 24h.
Program Command.
The Program command
can be used to program a value to one address in
the memory array at a time. The command re-
quires four Bus Write operations, the final write op-
eration latches the address and data in the internal
state machine and starts the Program/Erase Con-
troller.
During the program operation the memory will ig-
nore all commands. It is not possible to issue any
command to abort or pause the operation. Typical
program times are given in Table 5. Bus Read op-
erations during the program operation will output
the Status Register on the Data Inputs/Outputs.
See the section on the Status Register for more
details.
After the program operation has completed the
memory will return to the Read mode, unless an
error has occurred. When an error occurs the
memory will continue to output the Status Regis-
ter. A Read/Reset command must be issued to re-
set the error condition and return to Read mode.
Note that the Program command cannot change a
bit set at ’0’ back to ’1’ and attempting to do so will
cause an error. The Chip Erase command must be
used to set all the bits in the memory from ’0’ to ’1’.
Unlock Bypass Command.
The Unlock Bypass
command is used in conjunction with the Unlock
Bypass Program command to program the memo-
ry. When the access time to the device is long (as
with some EPROM programmers) considerable
time saving can be made by using these com-
mands. Three Bus Write operations are required
to issue the Unlock Bypass command.
Once the Unlock Bypass command has been is-
sued the memory will only accept the Unlock By-
pass Program command and the Unlock Bypass
Reset command. The memory can be read as if in
Read mode.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M29F512B70NZ1T | 512 Kbit 64Kb x8, Bulk Single Supply Flash Memory |
| M29F512B45K1T | 512 Kbit 64Kb x8, Bulk Single Supply Flash Memory |
| M29F512B45NZ1T | 512 Kbit 64Kb x8, Bulk Single Supply Flash Memory |
| M29KW032E110ZA6T | 32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash⑩ Memory |
| M29KW032E90N1T | 32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash⑩ Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29F800AB70M1 | 功能描述:閃存 STD FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F800AT70N6 | 功能描述:閃存 1Mx8 or 512Kx16 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F800AT-90NI | 制造商:STMicroelectronics 功能描述: |
| M29F800DB55M1 | 功能描述:閃存 SO-44 1MX8/512KX16 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F800DB55N1 | 功能描述:閃存 1Mx8 or 512Kx16 55ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。