參數(shù)資料
型號： M29F400BT90M3E
廠商： 意法半導體
英文描述： 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) single supply Flash memory
中文描述： 4兆位（512KB的x8或256Kb的x16插槽，引導塊）單電源閃存
文件頁數(shù)： 11/40頁
文件大?。?/td> 215K
代理商： M29F400BT90M3E
M29F400BT, M29F400BB
Signal descriptions
11/40
2.7
Write Enable (W)
The Write Enable, W, controls the Bus Write operation of the memory’s Command Interface.
2.8
Reset/Block Temporary Unprotect (RP)
The Reset/Block Temporary Unprotect pin can be used to apply a Hardware Reset to the
memory or to temporarily unprotect all Blocks that have been protected.
A Hardware Reset is achieved by holding Reset/Block Temporary Unprotect Low, V
IL
, for at
least t
PLPX
. After Reset/Block Temporary Unprotect goes High, V
IH
, the memory will be
ready for Bus Read and Bus Write operations after t
PHEL
or t
RHEL
, whichever occurs last.
See the Ready/Busy Output section,
Table 15.
and
Figure 11.
, Reset/Temporary Unprotect
AC Characteristics for more details.
Holding RP at V
ID
will temporarily unprotect the protected Blocks in the memory. Program
and Erase operations on all blocks will be possible. The transition from V
IH
to V
ID
must be
slower than t
PHPHH
.
2.9
Ready/Busy output (RB)
The Ready/Busy pin is an open-drain output that can be used to identify when the memory
array can be read. Ready/Busy is high-impedance during Read mode, Auto Select mode
and Erase Suspend mode.
After a Hardware Reset, Bus Read and Bus Write operations cannot begin until Ready/Busy
becomes high-impedance. See
Table 15.
and
Figure 11.
, Reset/Temporary Unprotect AC
Characteristics.
During Program or Erase operations Ready/Busy is Low, V
OL
. Ready/Busy will remain Low
during Read/Reset commands or Hardware Resets until the memory is ready to enter Read
mode.
The use of an open-drain output allows the Ready/Busy pins from several memories to be
connected to a single pull-up resistor. A Low will then indicate that one, or more, of the
memories is busy.
2.10
Byte/Word organization select (BYTE)
The Byte/Word Organization Select pin is used to switch between the 8-bit and 16-bit Bus
modes of the memory. When Byte/Word Organization Select is Low, V
IL
, the memory is in 8-
bit mode, when it is High, V
IH
, the memory is in 16-bit mode.
相關PDF資料
PDF描述
M29F400BT90M3F 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) single supply Flash memory
M29F400BT90M6E 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) single supply Flash memory
M29F400BT90M6F 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) single supply Flash memory
M29F400T 4Mbit (512Kb x8 or 256Kb x16, Boot Block) Single Supply Flash Memory(4Mb閃速存儲器)
M29W004B 4Mbit (512Kb x8, Boot Block) Low Voltage Single Supply Flash Memory(4Mb閃速存儲器)
相關代理商/技術參數(shù)
參數(shù)描述
M29F400BT90N1 功能描述:閃存 512Kx8 or 256Kx16 90 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29F400BT90N1T 功能描述:閃存 512Kx8 or 256Kx16 90 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29F400BT90N6 功能描述:閃存 512Kx8 or 256Kx16 90 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29F400BT90N6T 功能描述:閃存 512Kx8 or 256Kx16 90 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29F400FB55D11 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE 5V - Gel-pak, waffle pack, wafer, diced wafer on film
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