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參數(shù)資料
| 型號： | M29DW640D70ZA6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| 中文描述： | 64兆位（8兆x8或4Mb的x16插槽，多行，頁，引導(dǎo)塊）3V電源快閃記憶體 |
| 文件頁數(shù)： | 34/56頁 |
| 文件大?。?/td> | 942K |
| 代理商： | M29DW640D70ZA6T |
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M29DW640D
34/56
Figure 15. Toggle and Alternative Toggle Bits Mechanism, Chip Enable Controlled
Note: 1. The Toggle bit is output on DQ6.
2. The Alternative Toggle bit is output on DQ2.
Figure 16. Toggle and Alternative Toggle Bits Mechanism, Output Enable Controlled
Note: 1. The Toggle bit is output on DQ6.
2. The Alternative Toggle bit is output on DQ2.
Table 18. Toggle and Alternative Toggle Bits AC Characteristics
Note: t
ELQV
and
t
GLQV
values are
presented in
Table 15., Read AC Characteristics
.
Symbol
Alt
Parameter
M29DW640D
Unit
70
90
t
AXEL
Address Transition to Chip Enable Low
Min
10
10
ns
t
AXGL
Address Transition to Output Enable Low
Min
10
10
ns
AI08914c
G
A0-A20
DQ2
(1)
/DQ6
(2)
E
tAXEL
tELQV
Data
Data
Toggle/
Alternative Toggle Bit
tELQV
Address in the Bank
Being Programmed or Erased
Read Operation outside the Bank
Being Programmed or Erased
Address Outside the Bank
Being Programmed or Erased
Address Outside the Bank
Being Programmed or Erased
Toggle/
Alternative Toggle Bit
Read Operation Outside the Bank
Being Programmed or Erased
Read Operation in the Bank
Being Programmed or Erased
AI08915c
G
A0-A20
DQ2
(1)
/DQ6
(2)
E
tAXGL
tGLQV
Data
Data
Toggle/
Alternative Toggle Bit
tGLQV
Address in the Bank
Being Programmed or Erased
Read Operation outside the Bank
Being Programmed or Erased
Address Outside the Bank
Being Programmed or Erased
Address Outside the Bank
Being Programmed or Erased
Toggle/
Alternative Toggle Bit
Read Operation Outside the Bank
Being Programmed or Erased
Read Operation in the Bank
Being Programmed or Erased
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M29DW640D70ZA6F | 64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| M29DW640D70ZA6E | 64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| M29DW640D70ZA6 | 64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| M29DW640D70ZA1T | 64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| M29DW640D70ZA1F | 64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29DW640D90N1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| M29DW640D90N1E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| M29DW640D90N1F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| M29DW640D90N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| M29DW640D90N6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
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