參數(shù)資料
型號(hào): M29DW640D70ZA6T
廠商: 意法半導(dǎo)體
英文描述: 64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
中文描述: 64兆位(8兆x8或4Mb的x16插槽,多行,頁(yè),引導(dǎo)塊)3V電源快閃記憶體
文件頁(yè)數(shù): 22/56頁(yè)
文件大?。?/td> 942K
代理商: M29DW640D70ZA6T
M29DW640D
22/56
Table 7. Program, Erase Times and Program, Erase Endurance Cycles
Note: 1. Typical values measured at room temperature and nominal voltages.
2. Sampled, but not 100% tested.
3. Maximum value measured at worst case conditions for both temperature and V
CC
after 100,00 program/erase cycles.
4. Maximum value measured at worst case conditions for both temperature and V
CC
.
Parameter
Min
Typ
(1, 2)
Max
(2)
Unit
Chip Erase
80
400
(3)
s
Block Erase (64 KBytes)
0.8
6
(4)
s
Erase Suspend Latency Time
50
(4)
μs
Byte Program (1, 2, 4 or 8 at-a-time)
10
200
(3)
μs
Word Program (1, 2 or 4 at-a-time)
10
200
(3)
μs
Chip Program (Byte by Byte)
80
400
(3)
s
Chip Program (Word by Word)
40
200
(3)
s
Chip Program (Quadruple Byte or Double Word)
20
100
(3)
s
Chip Program (Octuple Byte or Quadruple Word)
10
50
(3)
s
Program Suspend Latency Time
4
μs
Program/Erase Cycles (per Block)
100,000
cycles
Data Retention
20
years
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