參數(shù)資料
型號: M29DW640D70N1F
廠商: 意法半導(dǎo)體
英文描述: 64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
中文描述: 64兆位(8兆x8或4Mb的x16插槽,多行,頁,引導(dǎo)塊)3V電源快閃記憶體
文件頁數(shù): 31/56頁
文件大小: 942K
代理商: M29DW640D70N1F
31/56
M29DW640D
Table 15. Read AC Characteristics
Note: 1. Sampled only, not 100% tested.
Symbol
Alt
Parameter
Test Condition
M29DW640D
Unit
70
90
t
AVAV
t
RC
Address Valid to Next Address Valid
E = V
IL
,
G = V
IL
Min
70
90
ns
t
AVQV
t
ACC
Address Valid to Output Valid
E = V
IL
,
G = V
IL
Max
70
90
ns
t
AVQV1
t
PAGE
Address Valid to Output Valid (Page)
E = V
IL
,
G = V
IL
Max
25
30
ns
t
ELQX
(1)
t
LZ
Chip Enable Low to Output Transition
G = V
IL
Min
0
0
ns
t
ELQV
t
CE
Chip Enable Low to Output Valid
G = V
IL
Max
70
90
ns
t
GLQX
(1)
t
OLZ
Output Enable Low to Output
Transition
E = V
IL
Min
0
0
ns
t
GLQV
t
OE
Output Enable Low to Output Valid
E = V
IL
Max
30
35
ns
t
EHQZ
(1)
t
HZ
Chip Enable High to Output Hi-Z
G = V
IL
Max
25
30
ns
t
GHQZ
(1)
t
DF
Output Enable High to Output Hi-Z
E = V
IL
Max
25
30
ns
t
EHQX
t
GHQX
t
AXQX
t
OH
Chip Enable, Output Enable or
Address Transition to Output Transition
Min
0
0
ns
t
ELBL
t
ELBH
t
ELFL
t
ELFH
Chip Enable to BYTE Low or High
Max
5
5
ns
t
BLQZ
t
FLQZ
BYTE Low to Output Hi-Z
Max
25
30
ns
t
BHQV
t
FHQV
BYTE High to Output Valid
Max
30
40
ns
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