參數(shù)資料
型號: M29F002BB45K1
廠商: 意法半導(dǎo)體
英文描述: 2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory
中文描述: 2兆位的256Kb × 8,啟動座單電源閃存
文件頁數(shù): 1/22頁
文件大?。?/td> 189K
代理商: M29F002BB45K1
1/22
April 2002
M29F002BT, M29F002BNT
M29F002BB, M29F002BNB
2 Mbit (256Kb x8, Boot Block) Single Supply Flash Memory
I
SINGLE 5V ± 10% SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
I
ACCESS TIME: 45 ns
I
PROGRAMMING TIME
– 8 μs by Byte typical
I
7 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 4 Main Blocks
I
PROGRAM/ERASE CONTROLLER
– Embedded Byte Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
I
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
I
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
I
TEMPORARY BLOCK UNPROTECTION
MODE
I
LOW POWER CONSUMPTION
– Standby and Automatic Standby
I
100,000 PROGRAM/ERASE CYCLES per
BLOCK
I
20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code M29F002BT: B0h
– Top Device Code M29F002BNT: B0h
– Bottom Device Code M29F002BB: 34h
– Bottom Device Code M29F002BNB: 34h
32
1
TSOP32 (N)
8 x 20mm
PLCC32 (K)
PDIP32 (P)
Figure 1. Logic Diagram
AI02957B
18
A0-A17
W
DQ0-DQ7
VCC
M29F002BT
M29F002BB
M29F002BNT
M29F002BNB
E
VSS
8
G
RP
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