參數(shù)資料
型號: M29F016B90M1T
廠商: 意法半導(dǎo)體
英文描述: 16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory
中文描述: 16兆位的2Mb × 8,統(tǒng)一座單電源閃存
文件頁數(shù): 1/22頁
文件大?。?/td> 135K
代理商: M29F016B90M1T
1/22
March 2000
M29F016B
16 Mbit (2Mb x8, Uniform Block) Single Supply Flash Memory
I
SINGLE 5V
±
10% SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
I
ACCESS TIME: 55ns
I
PROGRAMMING TIME
– 8
μ
s by Byte typical
I
32 UNIFORM 64 Kbyte MEMORY BLOCKS
I
PROGRAM/ERASE CONTROLLER
– Embedded Byte Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
– Ready/Busy Output Pin
I
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
I
TEMPORARY BLOCK UNPROTECTION
MODE
I
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
I
LOW POWER CONSUMPTION
– Standby and Automatic Standby
I
100,000 PROGRAM/ERASE CYCLES per
BLOCK
I
20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: ADh
TSOP40 (N)
10 x 20mm
SO44 (M)
44
1
Figure 1. Logic Diagram
AI02964
21
A0-A20
W
DQ0-DQ7
VCC
M29F016B
E
VSS
8
G
RP
RB
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