參數(shù)資料
型號(hào)： M29DW640D70N1
廠商： 意法半導(dǎo)體
英文描述： 64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
中文描述： 64兆位（8兆x8或4Mb的x16插槽，多行，頁(yè)，引導(dǎo)塊）3V電源快閃記憶體
文件頁(yè)數(shù)： 45/56頁(yè)
文件大?。?/td> 942K
代理商： M29DW640D70N1
45/56
M29DW640D
Table 26. CFI Query System Interface Information
Table 27. Device Geometry Definition
Address
Data
Description
Value
x16
x8
1Bh
36h
0027h
V
CC
Logic Supply Minimum Program/Erase voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
2.7V
1Ch
38h
0036h
V
CC
Logic Supply Maximum Program/Erase voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
3.6V
1Dh
3Ah
00B5h
V
PP
[Programming] Supply Minimum Program/Erase voltage
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
11.5V
1Eh
3Ch
00C5h
V
PP
[Programming] Supply Maximum Program/Erase voltage
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
12.5V
1Fh
3Eh
0004h
Typical timeout per single Byte/Word program = 2
n
μs
16μs
20h
40h
0000h
Typical timeout for minimum size write buffer program = 2
n
μs
NA
21h
42h
000Ah
Typical timeout per individual block erase = 2
n
ms
1s
22h
44h
0000h
Typical timeout for full Chip Erase = 2
n
ms
NA
23h
46h
0004h
Maximum timeout for Byte/Word program = 2
n
times typical
256 μs
24h
48h
0000h
Maximum timeout for write buffer program = 2
n
times typical
NA
25h
4Ah
0003h
Maximum timeout per individual block erase = 2
n
times typical
8s
26h
4Ch
0000h
Maximum timeout for Chip Erase = 2
n
times typical
NA
Address
Data
Description
Value
x16
x8
27h
4Eh
0017h
Device Size = 2
n
in number of Bytes
8 MBytes
28h
29h
50h
52h
0002h
0000h
Flash Device Interface Code description
x8, x16
Async.
2Ah
2Bh
54h
56h
0003h
0000h
Maximum number of Bytes in multi-Byte program or page = 2
n
8
2Ch
58h
0003h
Number of Erase Block Regions
(1)
. It specifies the number of
regions containing contiguous Erase Blocks of the same size.
3
2Dh
2Eh
5Ah
5Ch
0007h
0000h
Erase Block Region 1 Information
Number of Erase Blocks of identical size = 0007h+1
8
2Fh
30h
5Eh
60h
0020h
0000h
Erase Block Region 1 Information
Block size in Region 1 = 0020h * 256 Byte
8 KBytes
31h
32h
62h
64h
007Dh
0000h
Erase Block Region 2 Information
Number of Erase Blocks of identical size = 007Dh+1
126
33h
34h
66h
68h
0000h
0001h
Erase Block Region 2 Information
Block size in Region 2 = 0100h * 256 Byte
64 KBytes
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29DW640D70N1E 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
M29DW640D70N1F 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
M29DW640D70N1T 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
M29DW640D70N6 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3V/3.3V 64MBIT 8MX8/4MX16 70NS 48TSOP - Trays
M29DW640D70N6E 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:FLASH NOR HIGH DENSITY & CONSUMER
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