參數(shù)資料
型號(hào): M29DW324DT70N1E
廠商: 意法半導(dǎo)體
英文描述: 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory
中文描述: 32兆位4Mb的x8或功能的2Mb x16插槽,雙行16點(diǎn)16分,啟動(dòng)塊3V電源快閃記憶體
文件頁數(shù): 23/49頁
文件大小: 815K
代理商: M29DW324DT70N1E
23/49
M29DW324DT, M29DW324DB
DC AND AC PARAMETERS
This section summarizes the operating measure-
ment conditions, and the DC and AC characteris-
tics of the device. The parameters in the DC and
AC characteristics Tables that follow, are derived
from tests performed under the Measurement
Conditions summarized in Table 10, Operating
and AC Measurement Conditions. Designers
should check that the operating conditions in their
circuit match the operating conditions when rely-
ing on the quoted parameters.
Table 10. Operating and AC Measurement Conditions
Figure 10. AC Measurement I/O Waveform
Figure 11. AC Measurement Load Circuit
Table 11. Device Capacitance
Note: Sampled only, not 100% tested.
Parameter
M29DW324D
Unit
70
90
Min
Max
Min
Max
V
CC
Supply Voltage
3.0
3.6
2.7
3.6
V
Ambient Operating Temperature
–40
85
–40
85
°C
Load Capacitance (C
L
)
30
30
pF
Input Rise and Fall Times
10
10
ns
Input Pulse Voltages
0 to V
CC
0 to V
CC
V
Input and Output Timing Ref. Voltages
V
CC
/2
V
CC
/2
V
AI05557
VCC
0V
VCC/2
AI05558
CL
CL includes JIG capacitance
DEVICE
UNDER
TEST
25k
VCC
25k
VCC
0.1μF
VPP
0.1μF
Symbol
Parameter
Test Condition
Min
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Output Capacitance
V
OUT
= 0V
12
pF
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