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參數(shù)資料
| 型號(hào)： | M29DW128F60ZA1T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| 中文描述： | 128兆位（16Mb的x8或和8Mb x16插槽，多行，頁，引導(dǎo)塊）3V電源，快閃記憶體 |
| 文件頁數(shù)： | 84/93頁 |
| 文件大?。?/td> | 719K |
| 代理商： | M29DW128F60ZA1T |
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12 Part numbering
M29DW128F
84/93
Appendix D High Voltage Block Protection
The High Voltage Block Protection can be used to prevent any operation from modifying the
data stored in the memory. The blocks are protected in groups, refer to
Appendix A
,
Table 34
for
details of the Protection Groups. Once protected, Program and Erase operations within the
protected group fail to change the data.
There are three techniques that can be used to control Block Protection, these are the
Programmer technique, the In-System technique and Temporary Unprotection. Temporary
Unprotection is controlled by the Reset/Block Temporary Unprotection pin, RP; this is described
in the Signal Descriptions section.
To protect the Extended Block issue the Enter Extended Block command and then use either
the Programmer or In-System technique. Once protected issue the Exit Extended Block
command to return to read mode. The Extended Block protection is irreversible, once protected
the protection cannot be undone.
D.1
Programmer Technique
The Programmer technique uses high (V
ID
) voltage levels on some of the bus pins. These
cannot be achieved using a standard microprocessor bus, therefore the technique is
recommended only for use in Programming Equipment.
To protect a group of blocks follow the flowchart in
Figure 23: Programmer Equipment Group
Protect Flowchart
. To unprotect the whole chip it is necessary to protect all of the groups first,
then all groups can be unprotected at the same time. To unprotect the chip follow
Figure 24:
Programmer Equipment Chip Unprotect Flowchart
.
Table 42: Programmer Technique Bus
Operations, 8-bit or 16-bit Mode
, gives a summary of each operation.
The timing on these flowcharts is critical. Care should be taken to ensure that, where a pause is
specified, it is followed as closely as possible. Do not abort the procedure before reaching the
end. Chip Unprotect can take several seconds and a user message should be provided to show
that the operation is progressing.
D.2
In-System Technique
The In-System technique requires a high voltage level on the Reset/Blocks Temporary
Unprotect pin, RP
(1)
. This can be achieved without violating the maximum ratings of the
components on the microprocessor bus, therefore this technique is suitable for use after the
memory has been fitted to the system.
To protect a group of blocks follow the flowchart in
Figure 25: In-System Equipment Group
Protect Flowchart
. To unprotect the whole chip it is necessary to protect all of the groups first,
then all the groups can be unprotected at the same time. To unprotect the chip follow
Figure 26:
In-System Equipment Chip Unprotect Flowchart
.
The timing on these flowcharts is critical. Care should be taken to ensure that, where a pause is
specified, it is followed as closely as possible. Do not allow the microprocessor to service
interrupts that will upset the timing and do not abort the procedure before reaching the end.
Chip Unprotect can take several seconds and a user message should be provided to show that
the operation is progressing.
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| M29DW128F60ZA6E | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| M29DW128F60ZA6F | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| M29DW128F60ZA6T | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| M29DW128F70NF1 | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29DW128F60ZA6 | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory |
| M29DW128F60ZA6E | 功能描述:閃存 STD FLASH 128 MEG RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29DW128F60ZA6F | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory |
| M29DW128F60ZA6T | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory |
| M29DW128F70NF1 | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory |
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