參數(shù)資料
型號(hào): M29DW128F60ZA1T
廠商: 意法半導(dǎo)體
英文描述: 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
中文描述: 128兆位(16Mb的x8或和8Mb x16插槽,多行,頁(yè),引導(dǎo)塊)3V電源,快閃記憶體
文件頁(yè)數(shù): 13/93頁(yè)
文件大?。?/td> 719K
代理商: M29DW128F60ZA1T
M29DW128F
1 Summary description
13/93
Figure 5.
Block Addresses (x16)
1.
Also see
Appendix A
,
Table 34
for a full listing of the Block Addresses.
AI08967
32 KWords
400000h
407FFFh
32 KWords
7F0000h
7F7FFFh
7F8000h
(x16)
Address lines A22-A0
32 KWords
6F8000h
6FFFFFh
700000h
Total of 96
Main Blocks
32 KWords
707FFFh
4 KWords
7FF000h
7FFFFFh
4 KWords
7F8FFFh
Total of 31
Main Blocks
Total of 8
Parameter
Blocks
Bank C
Bank D
4 KWords
000000h
000FFFh
32 KWords
0F8000h
0FFFFFh
100000h
4 KWords
007000h
007FFFh
008000h
Total of 8
Parameter
Blocks
32 KWords
00FFFFh
32 KWords
3F8000h
3FFFFFh
32 KWord
107FFFh
Total of 31
Main Blocks
Total of 96
Main Blocks
Bank B
Bank A
相關(guān)PDF資料
PDF描述
M29DW128F60ZA6 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29DW128F60ZA6 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
M29DW128F60ZA6E 功能描述:閃存 STD FLASH 128 MEG RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29DW128F60ZA6F 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
M29DW128F60ZA6T 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
M29DW128F70NF1 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory