參數(shù)資料
型號： M29DW128F60ZA1F
廠商： 意法半導體
英文描述： 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
中文描述： 128兆位（16Mb的x8或和8Mb x16插槽，多行，頁，引導塊）3V電源，快閃記憶體
文件頁數(shù)： 34/93頁
文件大?。?/td> 719K
代理商： M29DW128F60ZA1F
6 Command Interface
M29DW128F
34/93
The Status Register bits DQ1, DQ5, DQ6, DQ7 can be used to monitor the device status during
a Write to Buffer and Program operation.
If is not possible to detect Program operation fails when changing programmed data from ‘0’ to
‘1’, that is when reprogramming data in a portion of memory already programmed. The
resulting data will be the logical OR between the previous value and the current value.
A Write to Buffer and Program Abort and Reset command must be issued to abort the Write to
Buffer and Program operation and reset the device in Read mode.
During Write to Buffer and Program operations, the bank being programmed will accept
Program/Erase Suspend commands.
See
Appendix E
,
Figure 27: Write to Buffer and Program Flowchart and Pseudo Code
, for a
suggested flowchart on using the Write to Buffer and Program command.
6.2.2
Write to Buffer and Program Confirm command
The Write to Buffer and Program Confirm command is used to confirm a Write to Buffer and
Program command and to program the n+1 Words loaded in the Write Buffer by this command.
6.2.3
Write to Buffer and Program Abort and Reset command
The Write to Buffer and Program Abort and Reset command is used to abort Write to Buffer
and Program command.
6.2.4
Double Word Program command
This is used to write two adjacent Words in x16 mode, simultaneously. The addresses of the
two Words must differ only in A0.
Three bus write cycles are necessary to issue the command:
1.
The first bus cycle sets up the command.
2.
The second bus cycle latches the Address and the Data of the first Word to be written.
3.
The third bus cycle latches the Address and the Data of the second Word to be written and
starts the Program/Erase Controller.
6.2.5
Quadruple Word Program command
This is used to write a page of four adjacent Words, in x16 mode, simultaneously. The
addresses of the four Words must differ only in A1 and A0.
Five bus write cycles are necessary to issue the command:
1.
The first bus cycle sets up the command.
2.
The second bus cycle latches the Address and the Data of the first Word to be written.
3.
The third bus cycle latches the Address and the Data of the second Word to be written.
4.
The fourth bus cycle latches the Address and the Data of the third Word to be written.
5.
The fifth bus cycle latches the Address and the Data of the fourth Word to be written and
starts the Program/Erase Controller.
6.2.6
Double Byte Program Command
This is used to write two adjacent Bytes in x8 mode, simultaneously. The addresses of the two
Bytes must differ only in DQ15A-1.
相關PDF資料
PDF描述
M29DW128F60ZA1T 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60ZA6 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60ZA6E 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60ZA6F 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60ZA6T 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
相關代理商/技術參數(shù)
參數(shù)描述
M29DW128F60ZA1T 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
M29DW128F60ZA6 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
M29DW128F60ZA6E 功能描述:閃存 STD FLASH 128 MEG RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29DW128F60ZA6F 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
M29DW128F60ZA6T 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
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