參數(shù)資料
型號: M29DW128F60NF6F
廠商: 意法半導(dǎo)體
英文描述: 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
中文描述: 128兆位(16Mb的x8或和8Mb x16插槽,多行,頁,引導(dǎo)塊)3V電源,快閃記憶體
文件頁數(shù): 60/93頁
文件大小: 719K
代理商: M29DW128F60NF6F
10 DC and AC parameters
M29DW128F
60/93
Table 28.
Write AC Characteristics, Chip Enable Controlled
Symbol
Alt
Parameter
M29DW128F
Unit
60
70
t
AVAV
t
WC
Address Valid to Next Address Valid
Min
60
70
ns
t
WLEL
t
WS
Write Enable Low to Chip Enable Low
Min
0
0
ns
t
ELEH
t
CP
Chip Enable Low to Chip Enable High
Min
45
45
ns
t
DVEH
t
DS
Input Valid to Chip Enable High
Min
45
45
ns
t
EHDX
t
DH
Chip Enable High to Input Transition
Min
0
0
ns
t
EHWH
t
WH
Chip Enable High to Write Enable High
Min
0
0
ns
t
EHEL
t
CPH
Chip Enable High to Chip Enable Low
Min
30
30
ns
t
AVEL
t
AS
Address Valid to Chip Enable Low
Min
0
0
ns
t
ELAX
t
AH
Chip Enable Low to Address Transition
Min
45
45
ns
t
GHEL
Output Enable High Chip Enable Low
Min
0
0
ns
t
EHGL
t
OEH
Chip Enable High to Output Enable Low
Min
0
0
ns
t
EHRL(1)
1.
Sampled only, not 100% tested.
t
BUSY
Program/Erase Valid to RB Low
Max
30
30
ns
t
VCHWL
t
VCS
V
CC
High to Write Enable Low
Min
50
50
μs
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M29DW128F60NF6T 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
M29DW128F60ZA1 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
M29DW128F60ZA1E 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
M29DW128F60ZA1F 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
M29DW128F60ZA1T 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory