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參數(shù)資料
| 型號： | M29DW128F60NF6F |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| 中文描述： | 128兆位（16Mb的x8或和8Mb x16插槽，多行，頁，引導(dǎo)塊）3V電源，快閃記憶體 |
| 文件頁數(shù)： | 28/93頁 |
| 文件大小： | 719K |
| 代理商： | M29DW128F60NF6F |
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6 Command Interface
M29DW128F
28/93
Table 6
.
Once the command is issued subsequent Bus Read operations in the same bank
(A22-A19) to the addresses shown in
Appendix B: Common Flash Interface (CFI)
(A7-A0), will
read from the Common Flash Interface Memory Area.
This command is valid only when the device is in the Read Array or Auto Select mode. To enter
Read CFI query mode from Auto Select mode, the Read CFI Query command must be issued
to the same bank address as the Auto Select command, otherwise the device will not enter
Read CFI Query mode.
The Read/Reset command must be issued to return the device to the previous mode (the Read
Array mode or Auto Select mode). A second Read/Reset command is required to put the
device in Read Array mode from Auto Select mode.
See
Appendix B
,
Table 35
,
Table 36
,
Table 37
,
Table 38
,
Table 39
and
Table 40
for details on
the information contained in the Common Flash Interface (CFI) memory area.
6.1.4
Chip Erase command
The Chip Erase command can be used to erase the entire chip. Six Bus Write operations are
required to issue the Chip Erase Command and start the Program/Erase Controller.
If any blocks are protected, then these are ignored and all the other blocks are erased. If all of
the blocks are protected the Chip Erase operation appears to start but will terminate within
about 100μs, leaving the data unchanged. No error condition is given when protected blocks
are ignored.
During the erase operation the memory will ignore all commands, including the Erase Suspend
command. It is not possible to issue any command to abort the operation. Typical chip erase
times are given in
Table 18
. All Bus Read operations during the Chip Erase operation will output
the Status Register on the Data Inputs/Outputs. See the section on the Status Register for
more details.
After the Chip Erase operation has completed the memory will return to the Read mode, unless
an error has occurred. When an error occurs the memory will continue to output the Status
Register. A Read/Reset command must be issued to reset the error condition and return to
Read mode.
The Chip Erase Command sets all of the bits in unprotected blocks of the memory to ’1’. All
previous data is lost.
6.1.5
Block Erase command
The Block Erase command can be used to erase a list of one or more blocks in one or more
Banks. It sets all of the bits in the unprotected selected blocks to ’1’. All previous data in the
selected blocks is lost.
Six Bus Write operations are required to select the first block in the list. Each additional block in
the list can be selected by repeating the sixth Bus Write operation using the address of the
additional block. The Block Erase operation starts the Program/Erase Controller after a time-
out period of 50μs after the last Bus Write operation. Once the Program/Erase Controller starts
it is not possible to select any more blocks. Each additional block must therefore be selected
within 50μs of the last block. The 50μs timer restarts when an additional block is selected. After
the sixth Bus Write operation a Bus Read operation within the same Bank will output the Status
Register. See the Status Register section for details on how to identify if the Program/Erase
Controller has started the Block Erase operation.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M29DW128F60NF6T | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| M29DW128F60ZA1 | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| M29DW128F60ZA1E | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| M29DW128F60ZA1F | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| M29DW128F60ZA1T | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29DW128F60NF6T | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory |
| M29DW128F60ZA1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory |
| M29DW128F60ZA1E | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory |
| M29DW128F60ZA1F | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory |
| M29DW128F60ZA1T | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory |
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