參數(shù)資料
型號(hào): M29DW128F60NF6
廠(chǎng)商: 意法半導(dǎo)體
英文描述: 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
中文描述: 128兆位(16Mb的x8或和8Mb x16插槽,多行,頁(yè),引導(dǎo)塊)3V電源,快閃記憶體
文件頁(yè)數(shù): 56/93頁(yè)
文件大?。?/td> 719K
代理商: M29DW128F60NF6
10 DC and AC parameters
M29DW128F
56/93
Table 26.
Read AC Characteristics
Symbol
Alt
Parameter
Test Condition
M29DW128F
Unit
60
70
t
AVAV
t
RC
Address Valid to Next Address Valid
E = V
IL
,
G = V
IL
Min
60
70
ns
t
AVQV
t
ACC
Address Valid to Output Valid
E = V
IL
,
G = V
IL
Max
60
70
ns
t
AVQV1
t
PAGE
Address Valid to Output Valid (Page)
E = V
IL
,
G = V
IL
Max
25
30
ns
t
ELQX(1)
1.
Sampled only, not 100% tested.
t
LZ
Chip Enable Low to Output Transition
G = V
IL
Min
0
0
ns
t
ELQV
t
CE
Chip Enable Low to Output Valid
G = V
IL
Max
60
70
ns
t
GLQX(1)
t
OLZ
Output Enable Low to Output
Transition
E = V
IL
Min
0
0
ns
t
GLQV
t
OE
Output Enable Low to Output Valid
E = V
IL
Max
20
25
ns
t
EHQZ(1)
t
HZ
Chip Enable High to Output Hi-Z
G = V
IL
Max
25
25
ns
t
GHQZ(1)
t
DF
Output Enable High to Output Hi-Z
E = V
IL
Max
25
25
ns
t
EHQX
t
GHQX
t
AXQX
t
OH
Chip Enable, Output Enable or
Address Transition to Output Transition
Min
0
0
ns
t
ELBL
t
ELBH
t
ELFL
t
ELFH
Chip Enable to BYTE Low or High
(2)
2.
TSOP56 package only.
Max
5
5
ns
t
BLQZ
t
FLQZ
BYTE Low to Output Hi-Z
(2)
Max
25
25
ns
t
BHQV
t
FHQV
BYTE High to Output Valid
(2)
Max
30
30
ns
相關(guān)PDF資料
PDF描述
M29DW128F60NF6E 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF6F 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF6T 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60ZA1 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60ZA1E 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29DW128F60NF6E 功能描述:閃存 128 Mbit RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線(xiàn)寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪(fǎng)問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29DW128F60NF6F 制造商:NUMONYX 制造商全稱(chēng):Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
M29DW128F60NF6T 制造商:NUMONYX 制造商全稱(chēng):Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
M29DW128F60ZA1 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
M29DW128F60ZA1E 制造商:NUMONYX 制造商全稱(chēng):Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory