參數(shù)資料
型號: M28W640FCT85ZB1
廠商: STMICROELECTRONICS
元件分類: PROM
英文描述: 4M X 16 FLASH 3V PROM, 85 ns, PBGA48
封裝: 6.39 X 10.50 MM, 0.75 PITCH, TFBGA-48
文件頁數(shù): 36/55頁
文件大?。?/td> 1141K
代理商: M28W640FCT85ZB1
41/55
M28W640FCT, M28W640FCB
Table 29. Device Geometry Definition
Offset Word
Mode
Data
Description
Value
27h
0017h
Device Size = 2n in number of bytes
8 MByte
28h
29h
0001h
0000h
Flash Device Interface Code description
x16
Async.
2Ah
2Bh
0003h
0000h
Maximum number of bytes in multi-byte program or page = 2n
8
2Ch
0002h
Number of Erase Block Regions within the device.
It specifies the number of regions within the device containing contiguous
Erase Blocks of the same size.
2
M2
8W
64
0F
CT
2Dh
2Eh
007Eh
0000h
Region 1 Information
Number of identical-size erase block = 007Eh+1
127
2Fh
30h
0000h
0001h
Region 1 Information
Block size in Region 1 = 0100h * 256 byte
64 KByte
31h
32h
0007h
0000h
Region 2 Information
Number of identical-size erase block = 0007h+1
8
33h
34h
0020h
0000h
Region 2 Information
Block size in Region 2 = 0020h * 256 byte
8 KByte
M2
8W
64
0F
CB
2Dh
2Eh
0007h
0000h
Region 1 Information
Number of identical-size erase block = 0007h+1
8
2Fh
30h
0020h
0000h
Region 1 Information
Block size in Region 1 = 0020h * 256 byte
8 KByte
31h
32h
007Eh
0000h
Region 2 Information
Number of identical-size erase block = 007Eh=1
127
33h
34h
0000h
0001h
Region 2 Information
Block size in Region 2 = 0100h * 256 byte
64 KByte
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