參數(shù)資料
型號： M28W640FCT85ZB1
廠商： STMICROELECTRONICS
元件分類： PROM
英文描述： 4M X 16 FLASH 3V PROM, 85 ns, PBGA48
封裝： 6.39 X 10.50 MM, 0.75 PITCH, TFBGA-48
文件頁數(shù)： 35/55頁
文件大?。?/td> 1141K
代理商： M28W640FCT85ZB1
M28W640FCT, M28W640FCB
40/55
Table 28. CFI Query System Interface Information
Offset
Data
Description
Value
1Bh
0027h
VDD Logic Supply Minimum Program/Erase or Write voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
2.7V
1Ch
0036h
VDD Logic Supply Maximum Program/Erase or Write voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
3.6V
1Dh
00B4h
VPP [Programming] Supply Minimum Program/Erase voltage
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
11.4V
1Eh
00C6h
VPP [Programming] Supply Maximum Program/Erase voltage
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
12.6V
1Fh
0004h
Typical time-out per single word program = 2n s
16s
20h
0004h
Typical time-out for Double/Quadruple Word Program = 2n s
16s
21h
000Ah
Typical time-out per individual block erase = 2n ms
1s
22h
0000h
Typical time-out for full chip erase = 2n ms
NA
23h
0005h
Maximum time-out for Word program = 2n times typical
512s
24h
0005h
Maximum time-out for Double/Quadruple Word Program = 2n times typical
512s
25h
0003h
Maximum time-out per individual block erase = 2n times typical
8s
26h
0000h
Maximum time-out for chip erase = 2n times typical
NA
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